Inelastic Electron Tunneling Spectroscopy of Langmuir-Blodgett Monolayers on Silicon Substrate

• Kazuhiro Kudo

• Choichiro Okazaki

• Shigekazu Kuniyoshi Shigekazu Kuniyoshi

• Kuniaki Tanaka Kuniaki Tanaka

抄録

An inelastic electron tunneling spectroscopy (IETS) technique is employed to investigate Langmuir-Blodgett monolayers deposited on silicon substrates. Thermally formed SiO 2 layers are used as a tunneling barrier to obtain reliable and sensitive signals. IETS data, which are compared to IR and Raman data, show the stability and chemical reactions of organic monolayers at the metal or SiO 2 interface.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 30 (7R), 1452-, 1991-07-01

  IOP Publishing

キーワード

• General Physics and Astronomy
• General Engineering

詳細情報

• CRID: 1360847871770815488
• NII論文ID: 30021859966
• NII論文ID: 210000030415
• NII書誌ID: AA10457675
• DOI: 10.1143/jjap.30.1452
• ISSN: 13474065
• ISSN: 00214922
• ISSN: http://id.crossref.org/issn/00214922
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.30.1452
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.30.1452/pdf
• データソース種別:
  • Crossref
  • CiNii Articles