Modulation Effects of Photocarriers on the Terahertz Plasma-Wave Resonance in High-Electron-Mobility Transistors under Interband Photoexcitation
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- Hanabe Mitsuhiro
- Kyushu Institute of Technology
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- Otsuji Taiichi
- Kyushu Institute of Technology
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- Ishibashi Takuma
- Kyushu Institute of Technology
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- Uno Tomohiro
- Kyushu Institute of Technology
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- Ryzhii Victor
- University of Aizu
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Two-dimensional (2-D) electron plasma in a submicron channel of a high-electron mobility transistor (HEMT) is excited by interband photoexcitation, resulting in performing the photomixing function. The injected photoelectrons modulate the total 2-D electron density, affecting the plasma resonant properties. The modulation depth of the density of 2-D electrons by the photoelectrons deeply relates to the resonant intensity and fr. This effect was modeled analytically in the 2-D plasma hydrodynamic equation. In order to validate the analytical calculation, the plasma-wave resonance was experimentally observed for a 0.15-μm gate-length InGaP/InGaAs/GaAs pseudomorphic HEMT in the terahertz range. At the modulation depth of 30%, the resonance was clearly observed with a double peak (the peak at 1.9/5.8 THz corresponding to the fundamental/third harmonic resonance). The resonant frequencies slightly shifted downward and the intensity attenuated with decreasing the modulation depth. Observed resonant frequencies support the analytical calculation.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 44 (6A), 3842-3847, 2005
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390001206266668800
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- NII論文ID
- 10016441067
- 30021866043
- 210000058090
- 130004534147
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- NII書誌ID
- AA10457675
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- ISSN
- 13474065
- 00214922
- http://id.crossref.org/issn/13474065
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- NDL書誌ID
- 7337495
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可