Quantitative analysis of strengthening mechanisms in thin Cu films: Effects of film thickness, grain size, and passivation
抄録
<jats:p>Thermal stresses in thin Cu films on silicon substrates were examined as a function of film thickness and presence of a silicon nitride passivation layer. At room temperature, tensile stresses increased with decreasing film thickness in qualitative agreement with a dislocation constraint model. However, in order to predict the stress levels, grain-size strengthening, which is shown to follow a Hall–Petch relation, must be superimposed. An alternative explanation is strain-hardening due to the increase in dislocation density, which was measured by x-ray diffraction. At 600 °C, the passivation increases the stress by an order of magnitude; this leads to a substantially different shape of the stress-temperature curves, which now resemble those of aluminum with only a native oxide layer. The effect of passivation is shown to be very sensitive to the deposition and test conditions.</jats:p>
収録刊行物
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- Journal of Materials Research
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Journal of Materials Research 13 (5), 1307-1317, 1998-05
Springer Science and Business Media LLC
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詳細情報 詳細情報について
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- CRID
- 1363388844827848960
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- NII論文ID
- 30035667977
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- ISSN
- 20445326
- 08842914
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- データソース種別
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