High speed deposition of Y2O3 films by laser-assisted chemical vapor deposition
-
- Banal Ryan
- Institute for Materials Research, Tohoku University
-
- Kimura Teiichi
- Institute for Materials Research, Tohoku University
-
- Goto Takashi
- Institute for Materials Research, Tohoku University
書誌事項
- タイトル別名
-
- High Speed Deposition of Y<SUB>2</SUB>O<SUB>3</SUB> Films by Laser-Assisted Chemical Vapor Deposition
この論文をさがす
抄録
Thick yttria (Y2O3) films were synthesized at high speeds by laser-assisted chemical vapor deposition (LCVD) using an Y(dpm)3 (dpm = dipivaloylmethanate) precursor. The effects of deposition conditions on the deposition rate and their microstructure were investigated. While the deposition rate was less than a few microns per hour at low laser powers (PL) less than 100 W, significantly high deposition rates of more than 200 μm/h (56 nm/s) were obtained at PL more than 160 W. The highest deposition rate in this study was 300 μm/h (83 nm/s) being 100 to 1000 times greater than those of conventional CVD processes. Deposited films were dense and isotropic with no preferred orientation showing cauliflower-like microstructure.
収録刊行物
-
- MATERIALS TRANSACTIONS
-
MATERIALS TRANSACTIONS 46 (9), 2114-2116, 2005
公益社団法人 日本金属学会
- Tweet
キーワード
詳細情報 詳細情報について
-
- CRID
- 1390282679227191040
-
- NII論文ID
- 130004452903
- 40006876272
-
- NII書誌ID
- AA1151294X
-
- ISSN
- 13475320
- 13459678
-
- HANDLE
- 10097/52305
-
- NDL書誌ID
- 7439372
-
- 本文言語コード
- en
-
- データソース種別
-
- JaLC
- IRDB
- NDL
- Crossref
- CiNii Articles
-
- 抄録ライセンスフラグ
- 使用不可