Effect of Rapid Thermal Annealing on Photoluminescence Properties of Low-Temperature Grown InGaAs/GaAs Multiple Quantum Wells

• Yasutomo Kajikawa

• Naoki Nishimoto

• Daisuke Fujioka

Bibliographic Information

Other Title

• Effect of Rapid Thermal Annealing on Photoluminescence Properties of Low Temperature Grown InGaAs GaAs Multiple Quantum Wells

Abstract

コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌

Journal

• Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP

  Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 45 (4A), 2412-2416, 2006-04

  Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

Keywords

• low-temperature MBE
• quantum well
• RTA
• interdiffusion

Details

• CRID: 1520572357075468032
• NII Article ID: 40007227439
• NII Book ID: AA10457675
• ISSN: 00214922
• ISSN: 13474065
• DOI: 10.1143/jjap.45.2412
• NDL BIB ID: 7882186
• Web Site: http://id.ndl.go.jp/bib/7882186
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I7882186
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.45.2412
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.45.2412/pdf
• Text Lang: en
• NDL Source Classification:
  • ZM35(科学技術--物理学)
• Data Source:
  • NDL
  • Crossref
  • CiNii Articles