Growth of Low-Dislocation-Density AlN under Ga Irradiation

• Akira Nakajima

• Yuzo Furukawa

• Hironobu Yokoya

抄録

コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌

収録刊行物

• Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP

  Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 45 (4A), 2422-2425, 2006-04

  Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

キーワード

• MBE
• SiC
• GaN
• AlGaN
• dislocation
• optical property
• deep-UV

詳細情報

• CRID: 1520290883566350976
• NII論文ID: 40007227441
• NII書誌ID: AA10457675
• ISSN: 00214922
• ISSN: 13474065
• DOI: 10.1143/jjap.45.2422
• NDL書誌ID: 7882218
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I7882218
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.45.2422
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.45.2422/pdf
• 本文言語コード: en
• NDL 雑誌分類:
  • ZM35(科学技術--物理学)
• データソース種別:
  • NDL
  • Crossref
  • CiNii Articles