Breakthroughs in Improving Crystal Quality of GaN and Invention of the p-n Junction Blue-Light-Emitting Diode

• Isamu Akasaki

• Hiroshi Amano

Bibliographic Information

Other Title

• Breakthroughs in Improving Crystal Quality of GaN and Invention of the p n Junction Blue Light Emitting Diode

Abstract

コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌

Journal

• Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP

  Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 45 (12), 9001-9010, 2006-12

  Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

Keywords

• group 3 semiconductors
• MOVPE
• low-temperature buffer layer
• conductivity control
• short-wavelength laser diode
• high-speed and high-power transistor

Details

• CRID: 1520572358266461824
• NII Article ID: 40015182096
• NII Book ID: AA10457675
• ISSN: 00214922
• NDL BIB ID: 8572594
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I8572594
• Text Lang: en
• NDL Source Classification:
  • ZM35(科学技術--物理学)
• Data Source:
  • NDL
  • CiNii Articles