Effects of heterointerface flatness on device performance of InP-based high electron mobility transistor (Special issue: Solid state devices and materials)

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Journal

  • Japanese journal of applied physics Pt. 1 Regular papers, brief communications & review papers

    Japanese journal of applied physics Pt. 1 Regular papers, brief communications & review papers 46(4B), 2325-2329, 2007-04

    Japan Society of Applied Physics

Codes

  • NII Article ID (NAID)
    40015349046
  • NII NACSIS-CAT ID (NCID)
    AA10457675
  • Text Lang
    ENG
  • Article Type
    特集
  • Journal Type
    大学紀要
  • ISSN
    00214922
  • NDL Article ID
    8719677
  • NDL Source Classification
    ZM35(科学技術--物理学)
  • NDL Call No.
    Z53-A375
  • Data Source
    NDL  Crossref 
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