Diffusion model of gallium in single-crystal ZnO proposed from analysis of concentration-dependent profiles based on the Fermi-level effect

• Tsubasa Nakagawa

• Isao Sakaguchi

• Masashi Uematsu

書誌事項

タイトル別名

• Diffusion model of gallium in single crystal ZnO proposed from analysis of concentration dependent profiles based on the Fermi level effect

抄録

コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌

収録刊行物

• Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP

  Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 46 (7A), 4099-4101, 2007-07

  Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

キーワード

• Fermi-level effect
• diffusion
• ZnO
• gallium
• SIMS
• ion implantation

詳細情報

• CRID: 1520853832156018432
• NII論文ID: 40015465506
• NII書誌ID: AA10457675
• ISSN: 00214922
• ISSN: 13474065
• DOI: 10.1143/jjap.46.4099
• NDL書誌ID: 8811750
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I8811750
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.46.4099
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.46.4099/pdf
• 本文言語コード: en
• NDL 雑誌分類:
  • ZM35(科学技術--物理学)
• データソース種別:
  • NDL
  • Crossref
  • CiNii Articles