Integration of tunnel-coupled double nanocrystalline silicon quantum dots with a multiple-gate single-electron transistor

• Yoshiyuki Kawata

• Mohammed A. H. Khalafalla

• Kouichi Usami

Bibliographic Information

Other Title

• Integration of tunnel coupled double nanocrystalline silicon quantum dots with a multiple gate single electron transistor

Abstract

コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌

Journal

• Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP

  Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 46 (7A), 4386-4389, 2007-07

  Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

Keywords

• double quantum dots
• nanocrystalline-silicon quantum dots
• qubit
• three-dimensional capacitance simulation
• single-electron transistor

Details

• CRID: 1520853834214544640
• NII Article ID: 40015465565
• NII Book ID: AA10457675
• ISSN: 00214922
• ISSN: 13474065
• ISSN: http://id.crossref.org/issn/13474065
• DOI: 10.1143/jjap.46.4386
• NDL BIB ID: 8812492
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I8812492
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.46.4386
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.46.4386/pdf
• Text Lang: en
• NDL Source Classification:
  • ZM35(科学技術--物理学)
• Data Source:
  • NDL
  • Crossref
  • CiNii Articles