Effects of hydrogen dilution ratio on properties of hydrogenated nanocrystalline cubic silicon carbide films deposited by very high-frequency plasma-enhanced chemical vapor deposition
Bibliographic Information
- Other Title
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- Effects of hydrogen dilution ratio on properties of hydrogenated nanocrystalline cubic silicon carbide films deposited by very high frequency plasma enhanced chemical vapor deposition
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Journal
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- Japanese journal of applied physics. Part 2, Letters & express letters
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Japanese journal of applied physics. Part 2, Letters & express letters 46 (25-28), L693-695, 2007-07
Tokyo : Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1522262179791954304
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- NII Article ID
- 40015511990
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- NII Book ID
- AA11906093
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- ISSN
- 00214922
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- NDL BIB ID
- 8835656
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- Text Lang
- en
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- NDL Source Classification
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- ZM35(科学技術--物理学)
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- Data Source
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- NDL
- CiNii Articles