Bending at thinned GaAs nodes in GaP-based free-standing nanowires

• Kouta Tateno

• Guoqiang Zhang

• Tetsuomi Sogawa

Bibliographic Information

Other Title

• Bending at thinned GaAs nodes in GaP based free standing nanowires

Journal

• Japanese journal of applied physics. Part 2, Letters & express letters

  Japanese journal of applied physics. Part 2, Letters & express letters 46 (33-35), L780-782, 2007-09

  Tokyo : Japan Society of Applied Physics

Keywords

• nanowire
• bending node
• GaAs
• GaP
• scanning electron microscopy
• transmission electron microscopy
• energy dispersive X-ray spectrometry

Details

• CRID: 1520010380016899840
• NII Article ID: 40015631248
• NII Book ID: AA11906093
• ISSN: 00214922
• NDL BIB ID: 8931854
• Web Site: http://id.ndl.go.jp/bib/8931854
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I8931854
• Text Lang: en
• NDL Source Classification:
  • ZM35(科学技術--物理学)
• Data Source:
  • NDL
  • CiNii Articles