Ga2O3 thin film growth on c-plane sapphire substrates by molecular beam epitaxy for deep-ultraviolet photodetectors

• Takayoshi Oshima

• Takeya Okuno

• Shizuo Fujita

Bibliographic Information

Other Title

• Ga2O3 thin film growth on c plane sapphire substrates by molecular beam epitaxy for deep ultraviolet photodetectors

Abstract

コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌

Journal

• Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP

  Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 46 (11), 7217-7220, 2007-11

  Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

Keywords

• Ga2O3
• molecular beam epitaxy
• c-plane sapphire
• deep-ultraviolet photodetector

Details

• CRID: 1520009408626385408
• NII Article ID: 40015705085
• NII Book ID: AA10457675
• ISSN: 00214922
• ISSN: 13474065
• ISSN: http://id.crossref.org/issn/13474065
• DOI: 10.1143/jjap.46.7217
• NDL BIB ID: 9260841
• Web Site: http://id.ndl.go.jp/bib/9260841
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I9260841
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.46.7217
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.46.7217/pdf
• Text Lang: en
• NDL Source Classification:
  • ZM35(科学技術--物理学)
• Data Source:
  • NDL
  • Crossref
  • CiNii Articles