Kinetics of subsurface formation during metal-organic vapor phase epitaxy growth of InP and InGaP

• Takayuki Nakano

• Masakazu Sugiyama

• Yoshiaki Nakano

Bibliographic Information

Other Title

• Kinetics of subsurface formation during metal organic vapor phase epitaxy growth of InP and InGaP

Abstract

コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌

Journal

• Japanese journal of applied physics : JJAP

  Japanese journal of applied physics : JJAP 47 (3), 1473-1478, 2008-03

  Tokyo : The Japan Society of Applied Physics

Keywords

• metal-organic vapor phase epitaxy
• InGaP
• GaAs
• hetero-interface
• subsurface
• In segregation
• kinetic model
• surface segregation

Details

• CRID: 1520572359325107328
• NII Article ID: 40015945423
• NII Book ID: AA12295836
• ISSN: 00214922
• NDL BIB ID: 9441017
• Web Site: http://id.ndl.go.jp/bib/9441017
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I9441017
• Text Lang: en
• NDL Source Classification:
  • ZM35(科学技術--物理学)
• Data Source:
  • NDL
  • CiNii Articles