Carbon reduction in GaAsN thin films by flow-rate-modulated chemical beam epitaxy

• Kenichi Nishimura

• Hidetoshi Suzuki

• Kenji Saito

Bibliographic Information

Other Title

• Carbon reduction in GaAsN thin films by flow rate modulated chemical beam epitaxy

Abstract

コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌

Journal

• Japanese journal of applied physics : JJAP

  Japanese journal of applied physics : JJAP 47 (4), 2072-2075, 2008-04

  Tokyo : The Japan Society of Applied Physics

Keywords

• GaAsN
• GaAs
• chemical beam epitaxy
• flow rate modulation
• residual carbon concentration
• monomethylhydrazine

Details

• CRID: 1520853833852093952
• NII Article ID: 40016003367
• NII Book ID: AA12295836
• ISSN: 00214922
• ISSN: 13474065
• DOI: 10.1143/jjap.47.2072
• NDL BIB ID: 9476918
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I9476918
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.47.2072
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.47.2072/pdf
• Text Lang: en
• NDL Source Classification:
  • ZM35(科学技術--物理学)
• Data Source:
  • NDL
  • Crossref
  • CiNii Articles