Effect of O2 gas during inductively coupled O2/Cl2 plasma etching of Mo and HfO2 for gate stack patterning

• Ho Young Jung

• Hag Joo Lee

• Bong Soo Kwon

書誌事項

タイトル別名

• Effect of O2 gas during inductively coupled O2 Cl2 plasma etching of Mo and HfO2 for gate stack patterning
• Special issue: Dry process
• Special issue Dry process

抄録

コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌

収録刊行物

• Japanese journal of applied physics : JJAP

  Japanese journal of applied physics : JJAP 47 (8), 6938-6942, 2008-08

  Tokyo : The Japan Society of Applied Physics

キーワード

• Mo
• HfO2
• plasma etching
• inductively coupled plasma
• ICP
• metal gate stack

詳細情報

• CRID: 1520853832484940032
• NII論文ID: 40016211137
• NII書誌ID: AA12295836
• ISSN: 00214922
• ISSN: 13474065
• DOI: 10.1143/jjap.47.6938
• NDL書誌ID: 9622231
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I9622231
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.47.6938
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.47.6938/pdf
• 本文言語コード: en
• NDL 雑誌分類:
  • ZM35(科学技術--物理学)
• データソース種別:
  • NDL
  • Crossref
  • CiNii Articles