Improvement in the quality of ZnTe epilayers grown on GaAs substrates by introducing a low-temperature buffer layer
Bibliographic Information
- Other Title
-
- Improvement in the quality of ZnTe epilayers grown on GaAs substrates by introducing a low temperature buffer layer
Search this article
Abstract
コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌
Journal
-
- Japanese journal of applied physics : JJAP
-
Japanese journal of applied physics : JJAP 48 (8), 080208-, 2009-08
Tokyo : The Japan Society of Applied Physics
- Tweet
Details 詳細情報について
-
- CRID
- 1520853833718543744
-
- NII Article ID
- 40016704626
-
- NII Book ID
- AA12295836
-
- ISSN
- 00214922
- 13474065
-
- NDL BIB ID
- 10327298
-
- Text Lang
- en
-
- NDL Source Classification
-
- ZM35(科学技術--物理学)
-
- Data Source
-
- NDL
- Crossref
- CiNii Articles