Anisotropy in ultrafast carrier and phonon dynamics in p-type heavily doped Si

• Keiko Kato

• Atsushi Ishizawa

• Katsuya Oguri

Bibliographic Information

Other Title

• Anisotropy in ultrafast carrier and phonon dynamics in p type heavily doped Si

Abstract

コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌

Journal

• Japanese journal of applied physics : JJAP

  Japanese journal of applied physics : JJAP 48 (10), 100205-, 2009-10

  Tokyo : The Japan Society of Applied Physics

Keywords

• General Physics and Astronomy
• Physics and Astronomy (miscellaneous)
• General Engineering

Details

• CRID: 1520009407285775232
• NII Article ID: 40016796021
• NII Book ID: AA12295836
• ISSN: 00214922
• ISSN: 13474065
• DOI: 10.1143/jjap.48.100205
• NDL BIB ID: 10406558
• Web Site: http://id.ndl.go.jp/bib/10406558
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I10406558
• Text Lang: en
• NDL Source Classification:
  • ZM35(科学技術--物理学)
• Data Source:
  • NDL
  • Crossref
  • CiNii Articles
  • KAKEN