Effects of the AlN interlayer on the distribution and mobility of two-dimensional electron gas in AlGaN/AlN/GaN heterojunctions

• Weiguo Hu

• Bei Ma

• Dabing Li

Bibliographic Information

Other Title

• Effects of the AlN interlayer on the distribution and mobility of two dimensional electron gas in AlGaN AlN GaN heterojunctions

Abstract

コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌

Journal

• Japanese journal of applied physics : JJAP

  Japanese journal of applied physics : JJAP 49 (3), 035701-, 2010-03

  Tokyo : The Japan Society of Applied Physics

Keywords

• General Physics and Astronomy
• General Engineering

Details

• CRID: 1520009407992961792
• NII Article ID: 40017033737
• NII Book ID: AA12295836
• ISSN: 00214922
• ISSN: 13474065
• DOI: 10.1143/jjap.49.035701
• NDL BIB ID: 10613638
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I10613638
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.49.035701
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.49.035701/pdf
• Text Lang: en
• NDL Source Classification:
  • ZM35(科学技術--物理学)
• Data Source:
  • NDL
  • Crossref
  • CiNii Articles