Lateral junction waveguide-type photodiode grown on semi-insulating InP substrate

• Tadashi Okumura

• Daisuke Kondo

• Hitomi Ito

Bibliographic Information

Other Title

• Lateral junction waveguide type photodiode grown on semi insulating InP substrate

Abstract

A lateral junction waveguide-type GaInAsP/InP photodetector was fabricated on a semi-insulating InP substrate by two-step organometallic vapor-phase epitaxy (OMVPE) regrowth. Responsivities of 0.9 A/W at 1500 nm and 0.27 A/W at 1550 nm were obtained. A 3-dB bandwidth of 6 GHz and 6-Gbps error-free operation under non-bias conditions were achieved with a stripe width of 1.4 µm and a device length of 220 µm.

Journal

• Japanese journal of applied physics : JJAP

  Japanese journal of applied physics : JJAP 50 (2), 020206-, 2011-02

  Tokyo : The Japan Society of Applied Physics

Keywords

• General Physics and Astronomy
• General Engineering

Details

• CRID: 1520853833182734720
• NII Article ID: 40018283282
• NII Book ID: AA12295836
• ISSN: 00214922
• ISSN: 13474065
• DOI: 10.1143/jjap.50.020206
• NDL BIB ID: 10981542
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I10981542
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.50.020206
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.50.020206/pdf
• Text Lang: en
• NDL Source Classification:
  • ZM35(科学技術--物理学)
• Data Source:
  • NDL
  • Crossref
  • CiNii Articles
  • KAKEN