Electric field induced carrier sweep-out in tandem InGaN multi-quantum-well self-pulsating laser diodes

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  • Electric field induced carrier sweep out in tandem InGaN multi quantum well self pulsating laser diodes

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<jats:p> Mechanisms of carrier sweep-out in tandem InGaN multiple-quantum-well self-pulsating laser diodes were investigated. Laser diodes showed self-pulsating characteristics without significant change in the light output–current (<jats:italic>I</jats:italic>–<jats:italic>L</jats:italic>) characteristics when an electric field high enough was established in the saturable absorber by the applied reverse bias. Improvements in the design of the band-energy profile allowed a substantial reduction in the bias required for self-pulsating operation. These results indicate that carrier lifetime can be controlled by the electric field in the saturable absorber and that band-energy profile engineering is effective for the reduction of carrier lifetime. </jats:p>

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