Large memory effect and high carrier mobility of organic field-effect transistors using semiconductor colloidal nano-dots dispersed in polymer buffer layers

• Kaori Kajimoto

• Atsushi Kurokawa

• Kazuyuki Uno

Bibliographic Information

Other Title

• Large memory effect and high carrier mobility of organic field effect transistors using semiconductor colloidal nano dots dispersed in polymer buffer layers

Abstract

We fabricated organic memory field-effect transistors (FETs) using PbS colloidal nano-dots (NDs) dispersed in thin poly(methyl methacrylate) (PMMA) layers inserted between gate insulators (SiO 2 ) and pentacene active layers as floating gates. The colloidal NDs were dispersed in chloroform solution with PMMA, and spin-coated on SiO 2 surfaces. The fabricated memory FETs showed significantly large threshold voltage shifts of 64.5 V at maximum after a writing voltage of 100 V was applied to their control gates, and a maximum carrier mobility of 0.36 cm 2 V -1 s -1 , which was comparable to that of reference pentacene FETs without colloidal NDs, was obtained because of the improved crystallinity of the pentacene films.

Journal

• Japanese journal of applied physics : JJAP

  Japanese journal of applied physics : JJAP 50 (2), 021601-, 2011-02

  Tokyo : The Japan Society of Applied Physics

Keywords

• General Physics and Astronomy
• General Engineering

Details

• CRID: 1520853833409342976
• NII Article ID: 40018283299
• NII Book ID: AA12295836
• ISSN: 00214922
• ISSN: 13474065
• DOI: 10.1143/jjap.50.021601
• NDL BIB ID: 10981671
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I10981671
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.50.021601
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.50.021601/pdf
• Text Lang: en
• NDL Source Classification:
  • ZM35(科学技術--物理学)
• Data Source:
  • NDL
  • Crossref
  • CiNii Articles
  • KAKEN