Time-resolved microphotoluminescence study of Cu(In,Ga)Se2
書誌事項
- タイトル別名
-
- Time resolved microphotoluminescence study of Cu In Ga Se2
- Special issue: Ternary and multinary compounds
- Special issue Ternary and multinary compounds
この論文をさがす
抄録
<jats:p> The carrier recombination processes in Cu(In<jats:sub>1-<jats:italic>x</jats:italic> </jats:sub>,Ga<jats:sub> <jats:italic>x</jats:italic> </jats:sub>)Se<jats:sub>2</jats:sub> (CIGS) thin films were investigated by time-resolved microscopic-photoluminescence (µ-PL) measurement at room temperature. For films with <jats:italic>x</jats:italic> = 0.45, the spatial distribution of the donor–acceptor pair luminescence is much larger than the grain size. The PL decay lifetime is directly correlated with the µ-PL intensity, but the spectral shape is identical regardless of the sample position. These results suggest that the nonuniform distribution of nonradiative recombination centers mainly affects the carrier recombination in CIGS thin films. At relatively high Ga concentrations (<jats:italic>x</jats:italic> ≥0.7), the spatial inhomogeneity in µ-PL intensity is enhanced and decay accelerated, suggesting an increase in the density of nonradiative recombination centers. Thus, suppression of nonradiative recombination is critical to enhancing the performance of CIGS-based solar cells. </jats:p>
収録刊行物
-
- Japanese journal of applied physics : JJAP
-
Japanese journal of applied physics : JJAP 50 (5), 05FC01-, 2011-05
Tokyo : The Japan Society of Applied Physics
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1520853833877208192
-
- NII論文ID
- 40018812702
-
- NII書誌ID
- AA12295836
-
- ISSN
- 00214922
- 13474065
-
- NDL書誌ID
- 11087573
-
- 本文言語コード
- en
-
- NDL 雑誌分類
-
- ZM35(科学技術--物理学)
-
- データソース種別
-
- NDL
- Crossref
- CiNii Articles
- KAKEN