Improvement of rear surface passivation quality in p-type silicon heterojunction solar cells using boron-doped microcrystalline silicon oxide

• Suttirat Rattanapan

• Tatsuro Watahiki

• Shinsuke Miyajima

書誌事項

タイトル別名

• Improvement of rear surface passivation quality in p type silicon heterojunction solar cells using boron doped microcrystalline silicon oxide

抄録

Boron-doped microcrystalline silicon oxide (µc-SiO x :H) films for application as a back surface field (BSF) in p-type silicon heterojunction (SHJ) solar cells have been characterized. We found that the µc-SiO x :H(p) film at the optimized condition shows high conductivity and good passivation effect with a low surface recombination velocity of around 10 2 cm/s. However, too much oxygen atoms in the films increase the defect and the passivation quality degrades. Thus, the control of oxygen content in the films is very important to obtain a high passivation quality. With applying the µc-SiO x :H(p) as a BSF layer leads to improved p-type SHJ solar cells performance, which shows the enchantment of EQE spectra in long wavelengths between 800 and 1200 nm. The highest efficiency of the p-type SHJ solar cell we obtain is 18.5% (active area = 0.88 cm 2 ) with a V oc = 659 mV, J sc = 34.7 mA/cm 2 , and FF= 80.9%.

収録刊行物

• Japanese journal of applied physics : JJAP

  Japanese journal of applied physics : JJAP 50 (8), 082301-, 2011-08

  Tokyo : The Japan Society of Applied Physics

キーワード

• General Physics and Astronomy
• General Engineering

詳細情報

• CRID: 1520572358605669504
• NII論文ID: 40018960999
• NII書誌ID: AA12295836
• ISSN: 00214922
• ISSN: 13474065
• DOI: 10.1143/jjap.50.082301
• NDL書誌ID: 11211269
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I11211269
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.50.082301
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.50.082301/pdf
• 本文言語コード: en
• NDL 雑誌分類:
  • ZM35(科学技術--物理学)
• データソース種別:
  • NDL
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  • CiNii Articles