Improvement of rear surface passivation quality in p-type silicon heterojunction solar cells using boron-doped microcrystalline silicon oxide

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  • Improvement of rear surface passivation quality in p type silicon heterojunction solar cells using boron doped microcrystalline silicon oxide

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Abstract

<jats:p> Boron-doped microcrystalline silicon oxide (µc-SiO<jats:sub> <jats:italic>x</jats:italic> </jats:sub>:H) films for application as a back surface field (BSF) in p-type silicon heterojunction (SHJ) solar cells have been characterized. We found that the µc-SiO<jats:sub> <jats:italic>x</jats:italic> </jats:sub>:H(p) film at the optimized condition shows high conductivity and good passivation effect with a low surface recombination velocity of around 10<jats:sup>2</jats:sup> cm/s. However, too much oxygen atoms in the films increase the defect and the passivation quality degrades. Thus, the control of oxygen content in the films is very important to obtain a high passivation quality. With applying the µc-SiO<jats:sub> <jats:italic>x</jats:italic> </jats:sub>:H(p) as a BSF layer leads to improved p-type SHJ solar cells performance, which shows the enchantment of EQE spectra in long wavelengths between 800 and 1200 nm. The highest efficiency of the p-type SHJ solar cell we obtain is 18.5% (active area = 0.88 cm<jats:sup>2</jats:sup>) with a <jats:italic>V</jats:italic> <jats:sub>oc</jats:sub> = 659 mV, <jats:italic>J</jats:italic> <jats:sub>sc</jats:sub> = 34.7 mA/cm<jats:sup>2</jats:sup>, and FF= 80.9%. </jats:p>

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