Dual metal/high-k gate-last complementary metal-oxide-semiconductor field-effect transistor with SiBN film and characteristic behavior in sub-1-nm equivalent oxide thickness

• Yoshiaki Kikuchi

• Hitoshi Wakabayashi

• Masanori Tsukamoto

書誌事項

タイトル別名

• Dual metal high k gate last complementary metal oxide semiconductor field effect transistor with SiBN film and characteristic behavior in sub 1 nm equivalent oxide thickness

収録刊行物

• Japanese journal of applied physics : JJAP

  Japanese journal of applied physics : JJAP 50 (8), 2011-08

  Tokyo : The Japan Society of Applied Physics

詳細情報

• CRID: 1520290883507497728
• NII論文ID: 40018961008
• NII書誌ID: AA12295836
• ISSN: 00214922
• NDL書誌ID: 11211398
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I11211398
• 本文言語コード: en
• NDL 雑誌分類:
  • ZM35(科学技術--物理学)
• データソース種別:
  • NDL
  • CiNii Articles