Growth of high-quality Si-doped AlGaN by low-pressure metalorganic vapor phase epitaxy

DOI Web Site Web Site Web Site 8 Citations 20 References

Bibliographic Information

Other Title
  • Growth of high quality Si doped AlGaN by low pressure metalorganic vapor phase epitaxy

Search this article

Abstract

<jats:p> In this paper we report the growth of Si-doped AlGaN on an AlN/sapphire substrate by low-pressure metalorganic vapor phase epitaxy (LP-MOVPE) with an <jats:italic>in situ</jats:italic> monitoring system to fabricate a high-quality film with controlled thickness. The AlN mole fraction in AlGaN can be controlled by adjusting the growth temperature. We also discuss the quality and growth mechanism of AlGaN on AlN. GaN and AlGaN with an AlN mole fraction of 0.28 were free from stress because of the occurrence of three-dimensional (3D) growth. The lattice constant <jats:italic>a</jats:italic> of AlGaN with an AlN mole fraction of 0.40 was larger than that at an AlN mole fraction of 0.28 despite the two-dimensional (2D) growth mode. This indicates that the lattice mismatch between AlGaN and the underlying AlN adversely affects the crystal quality. AlGaN with an AlN mole fraction of over 0.60 was coherently grown on AlN owing to the fact that the AlN/sapphire template used in this work was subjected to compression. For this reason, in the samples with an AlN mole fraction of over 0.6, the crystal quality was high because of the coherent growth on the underlying AlN. Moreover, Si doping was performed for AlGaN. The carrier concentration increased linearly up to a Si concentration of 2 ×10<jats:sup>18</jats:sup> cm<jats:sup>-3</jats:sup>, indicating that the activation rate was approximately 1. </jats:p>

Journal

Citations (8)*help

See more

References(20)*help

See more

Related Projects

See more

Keywords

Details 詳細情報について

Report a problem

Back to top