Impact of Gate Poly Depletion on Evaluation of Channel Temperature in Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors with Four-Point Gate Resistance Measurement Method

• Nobuyasu Beppu

• Tsunaki Takahashi

• Teruyuki Ohashi

書誌事項

タイトル別名

• Special Issue : Solid State Devices and Materials (1)

収録刊行物

• Japanese journal of applied physics : JJAP

  Japanese journal of applied physics : JJAP 51 (2), 2012-02

  Tokyo : The Japan Society of Applied Physics

詳細情報

• CRID: 1520009408211492224
• NII論文ID: 40019170169
• NII書誌ID: AA12295836
• ISSN: 00214922
• NDL書誌ID: 023454283
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I023454283
• 本文言語コード: en
• NDL 雑誌分類:
  • ZM35(科学技術--物理学)
• データソース種別:
  • NDL
  • CiNii Articles