Hydrogen Effects on the Properties of Silicon/Nitrogen-Coincorporated Diamond-Like Carbon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition
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<jats:p> We have deposited silicon/nitrogen-coincorporated diamond-like carbon (Si–N–DLC) films by radio-frequency plasma-enhanced chemical vapor deposition using hexamethyldisilazane (HMDS) as the Si and N source, and investigated the structure, chemical bonding, and the mechanical and tribological properties of the films. We compared the properties between Si–N–DLC films deposited with hydrogen gas and those with argon gas, which were used as the dilution gases. As HMDS flow ratio [HMDS/(HMDS+CH<jats:sub>4</jats:sub>)] increased, internal stress decreased and, at the same time, adhesion strength determined by scratch tests increased. However, many particles were observed on the film surfaces when the deposition with argon gas was carried out. It was found that the use of hydrogen gas was effective in suppressing the formation of particles and further increasing adhesion strength. Friction coefficient, as evaluated by ball-on-plate reciprocating friction tests, decreased with increasing HMDS flow ratio. The friction coefficient values of the Si–N–DLC films were as low as those of Si-incorporated DLC films. We also found that employing hydrogen gas reduced the friction coefficient and wear rate of the films. </jats:p>
収録刊行物
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- Japanese journal of applied physics : JJAP
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Japanese journal of applied physics : JJAP 51 (7), 075801-, 2012-07
Tokyo : The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1520572358391089920
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- NII論文ID
- 40019351216
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- NII書誌ID
- AA12295836
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- ISSN
- 00214922
- 13474065
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- NDL書誌ID
- 023830180
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- 本文言語コード
- en
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- NDL 雑誌分類
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- ZM35(科学技術--物理学)
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- データソース種別
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- NDL
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