Reduction in Dislocation Density of Semipolar GaN Layers on Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy

• Keisuke Yamane

• Motohisa Ueno

• Katsumi Uchida

収録刊行物

• Applied physics express : APEX

  Applied physics express : APEX 5 (9), 2012-09

  Tokyo : Japan Society of Applied Physics

詳細情報

• CRID: 1523951030763522176
• NII論文ID: 40019425389
• NII書誌ID: AA12295133
• ISSN: 18820778
• NDL書誌ID: 023966797
• Web Site: http://id.ndl.go.jp/bib/023966797
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I023966797
• 本文言語コード: en
• NDL 雑誌分類:
  • ZM35(科学技術--物理学)
• データソース種別:
  • NDL
  • CiNii Articles