Matching-Circuit-Integrated InGaAsP Schottky Barrier Diode for Zero-Biased Operation in the Sub-Millimeter-Wave Range

• Hiroshi Ito

• Yoshifumi Muramoto

• Hiroshi Yamamoto

抄録

An InP/InGaAsP Schottky barrier diode (SBD) for zero-biased operation in the sub-millimeter-wave range has been designed and fabricated. The SBD is monolithically integrated with a short-stub resonant matching circuit to increase the detection sensitivity around the designated frequency as well as to provide a biasing circuit. The fabricated device exhibits a small Schottky barrier height of about 0.37 eV, which is suitable for zero-biased operation. The SBD chip is mounted in a compact J-band (WR-3) rectangular-waveguide-input module to evaluate the high-frequency characteristics. The module exhibits a peak sensitivity at around 350 GHz due to the characteristics of the matching circuit, and good linearity of the output voltage against the input sub-mm-wave power. A record sensitivity of 1460 V/W at 350 GHz is obtained for the InP-based zero-biased SBD.

収録刊行物

• Japanese journal of applied physics : JJAP

  Japanese journal of applied physics : JJAP 51 (11), 114101-, 2012-11

  Tokyo : The Japan Society of Applied Physics

キーワード

• General Physics and Astronomy
• General Engineering

詳細情報

• CRID: 1520009408870844288
• NII論文ID: 40019496079
• NII書誌ID: AA12295836
• ISSN: 00214922
• ISSN: 13474065
• DOI: 10.1143/jjap.51.114101
• NDL書誌ID: 024102897
• Web Site: http://id.ndl.go.jp/bib/024102897
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I024102897
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.51.114101
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.51.114101/pdf
• 本文言語コード: en
• NDL 雑誌分類:
  • ZM35(科学技術--物理学)
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