Thickness Dependence of Structural and Electrical Properties of Thin InN Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

• Junichi Sakaguchi

• Tsutomu Araki

• Tatsuya Fujishima

書誌事項

タイトル別名

• Special Issue : Recent Advances in Nitride Semiconductors

収録刊行物

• Japanese journal of applied physics : JJAP

  Japanese journal of applied physics : JJAP 52 (8), 2013-08

  Tokyo : The Japan Society of Applied Physics

詳細情報

• CRID: 1520572358633975040
• NII論文ID: 40019758125
• NII書誌ID: AA12295836
• ISSN: 00214922
• NDL書誌ID: 024786326
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I024786326
• 本文言語コード: en
• NDL 雑誌分類:
  • ZM35(科学技術--物理学)
• データソース種別:
  • NDL
  • CiNii Articles