Origin and Appearance of Defective Pits in the Gate–Drain Region during Reliability Measurements of AlGaN/GaN High-Electron-Mobility Transistors on Si

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Journal

  • Applied physics express : APEX

    Applied physics express : APEX 6(11), 116601-1-3, 2013-11

    Japan Society of Applied Physics

Codes

  • NII Article ID (NAID)
    40019884090
  • NII NACSIS-CAT ID (NCID)
    AA12295133
  • Text Lang
    ENG
  • ISSN
    1882-0778
  • NDL Article ID
    025034426
  • NDL Call No.
    Z78-A526
  • Data Source
    NDL 
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