Deep-states characterization of hydrogenated amorphous silicon by current transient spectroscopy 電流過渡分光法による水素化アモルファスシリコンの深い状態評価に関する研究

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Author

    • 木田, 浩嗣 キダ, ヒロツグ

Bibliographic Information

Title

Deep-states characterization of hydrogenated amorphous silicon by current transient spectroscopy

Other Title

電流過渡分光法による水素化アモルファスシリコンの深い状態評価に関する研究

Author

木田, 浩嗣

Author(Another name)

キダ, ヒロツグ

University

大阪大学

Types of degree

工学博士

Grant ID

乙第5294号

Degree year

1991-02-26

Note and Description

博士論文

Table of Contents

  1. TABLE OF CONTENTS / p5 (0005.jp2)
  2. Chapter I.INTRODUCTION / p1 (0007.jp2)
  3. 1-1.Historical background / p1 (0007.jp2)
  4. 1-2.Objective of this work / p3 (0008.jp2)
  5. Chapter Ⅱ.MACROSCOPIC DESCRIPTION OF ELECTRONIC BEHAVIOR IN AMORPHOUS SEMICONDUCTORS / p10 (0012.jp2)
  6. 2-1.Introduction / p10 (0012.jp2)
  7. 2-2.Mobility / p11 (0012.jp2)
  8. 2-3.Carrier concentration / p13 (0013.jp2)
  9. 2-4.Lifetime / p19 (0016.jp2)
  10. 2-5.A physical model for lifetime / p26 (0020.jp2)
  11. 2-6.Lifetime for crystalline semiconductors and deep states for amorphous semiconductors / p31 (0022.jp2)
  12. 2-7.Summary / p37 (0025.jp2)
  13. Chapter Ⅲ.THERMALLY STIMULATED TRANSIENT SPECTROSCOPY OF DEEP STATES IN AMORPHOUS SEMICONDUCTORS / p40 (0027.jp2)
  14. 3-1.Introduction / p40 (0027.jp2)
  15. 3-2.Outline of junction transient spectroscopy / p42 (0028.jp2)
  16. 3-3.Energy analysis of transient signal / p60 (0037.jp2)
  17. 3-4.Spatial analysis in transient spectroscopy / p90 (0052.jp2)
  18. 3-5.Summary / p92 (0053.jp2)
  19. Chapter Ⅳ.DEVICE MODELING OF AMORPHOUS SILICON BASED JUNCTION / p97 (0055.jp2)
  20. 4-1.Introduction / p97 (0055.jp2)
  21. 4-2.Basic semiconductor equations / p100 (0057.jp2)
  22. 4-3.Boundary conditions / p102 (0058.jp2)
  23. 4-4.Implementation / p105 (0059.jp2)
  24. 4-5.Representative examples / p106 (0060.jp2)
  25. 4-6.Summary / p110 (0062.jp2)
  26. Chapter V.MEASUREMENT OF DEEP-STATES ENERGY DISTRIBUTION / p113 (0063.jp2)
  27. 5-1.Introduction / p113 (0063.jp2)
  28. 5-2.Current transient spectroscopy / p115 (0064.jp2)
  29. 5-3.Experiment / p138 (0076.jp2)
  30. 5-4.Density-of-states energy distribution in undoped amorphous silicon / p142 (0078.jp2)
  31. 5-5.Summary / p155 (0084.jp2)
  32. Chapter Ⅵ.CONCLUSIONS / p160 (0087.jp2)
  33. Appendix.Probability meaning of statistical lifetime / p164 (0089.jp2)
  34. VITA / (0090.jp2)
5access

Codes

  • NII Article ID (NAID)
    500000075891
  • NII Author ID (NRID)
    • 8000000076092
  • DOI(NDL)
  • Text Lang
    • und
  • NDLBibID
    • 000000240205
  • Source
    • Institutional Repository
    • NDL ONLINE
    • NDL Digital Collections
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