Deep-states characterization of hydrogenated amorphous silicon by current transient spectroscopy 電流過渡分光法による水素化アモルファスシリコンの深い状態評価に関する研究
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Bibliographic Information
- Title
-
Deep-states characterization of hydrogenated amorphous silicon by current transient spectroscopy
- Other Title
-
電流過渡分光法による水素化アモルファスシリコンの深い状態評価に関する研究
- Author
-
木田, 浩嗣
- Author(Another name)
-
キダ, ヒロツグ
- University
-
大阪大学
- Types of degree
-
工学博士
- Grant ID
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乙第5294号
- Degree year
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1991-02-26
Note and Description
博士論文
Table of Contents
- TABLE OF CONTENTS / p5 (0005.jp2)
- Chapter I.INTRODUCTION / p1 (0007.jp2)
- 1-1.Historical background / p1 (0007.jp2)
- 1-2.Objective of this work / p3 (0008.jp2)
- Chapter Ⅱ.MACROSCOPIC DESCRIPTION OF ELECTRONIC BEHAVIOR IN AMORPHOUS SEMICONDUCTORS / p10 (0012.jp2)
- 2-1.Introduction / p10 (0012.jp2)
- 2-2.Mobility / p11 (0012.jp2)
- 2-3.Carrier concentration / p13 (0013.jp2)
- 2-4.Lifetime / p19 (0016.jp2)
- 2-5.A physical model for lifetime / p26 (0020.jp2)
- 2-6.Lifetime for crystalline semiconductors and deep states for amorphous semiconductors / p31 (0022.jp2)
- 2-7.Summary / p37 (0025.jp2)
- Chapter Ⅲ.THERMALLY STIMULATED TRANSIENT SPECTROSCOPY OF DEEP STATES IN AMORPHOUS SEMICONDUCTORS / p40 (0027.jp2)
- 3-1.Introduction / p40 (0027.jp2)
- 3-2.Outline of junction transient spectroscopy / p42 (0028.jp2)
- 3-3.Energy analysis of transient signal / p60 (0037.jp2)
- 3-4.Spatial analysis in transient spectroscopy / p90 (0052.jp2)
- 3-5.Summary / p92 (0053.jp2)
- Chapter Ⅳ.DEVICE MODELING OF AMORPHOUS SILICON BASED JUNCTION / p97 (0055.jp2)
- 4-1.Introduction / p97 (0055.jp2)
- 4-2.Basic semiconductor equations / p100 (0057.jp2)
- 4-3.Boundary conditions / p102 (0058.jp2)
- 4-4.Implementation / p105 (0059.jp2)
- 4-5.Representative examples / p106 (0060.jp2)
- 4-6.Summary / p110 (0062.jp2)
- Chapter V.MEASUREMENT OF DEEP-STATES ENERGY DISTRIBUTION / p113 (0063.jp2)
- 5-1.Introduction / p113 (0063.jp2)
- 5-2.Current transient spectroscopy / p115 (0064.jp2)
- 5-3.Experiment / p138 (0076.jp2)
- 5-4.Density-of-states energy distribution in undoped amorphous silicon / p142 (0078.jp2)
- 5-5.Summary / p155 (0084.jp2)
- Chapter Ⅵ.CONCLUSIONS / p160 (0087.jp2)
- Appendix.Probability meaning of statistical lifetime / p164 (0089.jp2)
- VITA / (0090.jp2)