Microscopic theory of initial oxidation on Si(100) surfaces 結晶表面の酸化初期過程
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Bibliographic Information
- Title
-
Microscopic theory of initial oxidation on Si(100) surfaces
- Other Title
-
結晶表面の酸化初期過程
- Author
-
宮本, 良之
- Author(Another name)
-
ミヤモト, ヨシユキ
- University
-
大阪大学
- Types of degree
-
工学博士
- Grant ID
-
乙第5302号
- Degree year
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1991-02-26
Note and Description
博士論文
Table of Contents
- Contents / p3 (0004.jp2)
- 1 Introduction / p5 (0005.jp2)
- 1.1 Motivation / p5 (0005.jp2)
- 1.2 Historical survey / p8 (0006.jp2)
- 1.3 The structure of the Si(1OO) surfaces / p16 (0010.jp2)
- 1.4 Organization of present thesis / p17 (0011.jp2)
- 2 Calculation / p19 (0012.jp2)
- 2.1 Total energy and forces within the local density approximation / p19 (0012.jp2)
- 2.2 Confirmation of the validity of present gaussian basis set / p24 (0014.jp2)
- 2.3 The conditions of the present calculations / p26 (0015.jp2)
- 3 Energetics of initial oxidation / p28 (0016.jp2)
- 3.1 Dissociation of an O₂ molecule on the Si(100) surface / p29 (0017.jp2)
- 3.2 Adsorption of an O atom on the Si(100) surface / p32 (0018.jp2)
- 3.3 Comparison with the experimental results / p35 (0020.jp2)
- 3.4 Penetration and adsorption of oxygen through oxygen covered surface / p39 (0022.jp2)
- 4 Discussion / p43 (0024.jp2)
- 4.1 The possible geometries of adsorbed oxygen / p43 (0024.jp2)
- 4.2 The kinetics of oxidation on the Si(100) surface / p46 (0025.jp2)
- 4.3 For the further understanding of the oxidation / p49 (0027.jp2)
- 5 Concluding remarks / p52 (0028.jp2)
