Growth and characterization of insulating oxide films on silicon Si上の酸化物絶縁体薄膜の形成と評価

Access this Article

Search this Article

Author

    • 福本, 博文 フクモト, ヒロフミ

Bibliographic Information

Title

Growth and characterization of insulating oxide films on silicon

Other Title

Si上の酸化物絶縁体薄膜の形成と評価

Author

福本, 博文

Author(Another name)

フクモト, ヒロフミ

University

広島大学

Types of degree

工学博士

Grant ID

甲第976号

Degree year

1991-03-25

Note and Description

博士論文

Table of Contents

  1. Contents / p7 (0005.jp2)
  2. 1 Introduction / p1 (0008.jp2)
  3. REFERENCES / p5 (0010.jp2)
  4. 2 Growth of Crystalline ZrO₂ Films on Si / p7 (0011.jp2)
  5. 2.1 Introduction / p7 (0011.jp2)
  6. 2.2 Experimental Procedures / p8 (0012.jp2)
  7. 2.3 Results and Discussion / p9 (0012.jp2)
  8. 2.4 Summary / p14 (0015.jp2)
  9. REFERENCES / p15 (0015.jp2)
  10. 3 Growth of Crystalline ZrO₂-Y₂O₃ films on Si / p17 (0016.jp2)
  11. 3.1 Introduction / p17 (0016.jp2)
  12. 3.2 Experimental Procedures / p18 (0017.jp2)
  13. 3.3 Characterization of [化学式] Films / p20 (0018.jp2)
  14. 3.4 Summary / p30 (0023.jp2)
  15. REFERENCES / p31 (0023.jp2)
  16. 4 Electrical Characteristics of ZrO₂-Y₂O₃ Dielectric Films / p33 (0024.jp2)
  17. 4.1 Introduction / p33 (0024.jp2)
  18. 4.2 ZrO₂/SiO₂ Films / p34 (0025.jp2)
  19. 4.3 Epitaxial YSZ Films / p43 (0029.jp2)
  20. 4.4 Summary / p45 (0030.jp2)
  21. REFERENCES / p49 (0032.jp2)
  22. 5 Evaluation of Crystalline Quality of ZrO₂-Y₂O₃ Films on Si by Ion Beam Channeling / p51 (0033.jp2)
  23. 5.1 Introduction / p51 (0033.jp2)
  24. 5.2 Experiment / p51 (0033.jp2)
  25. 5.3 Channeling / p52 (0034.jp2)
  26. 5.4 Defect Analysis / p59 (0037.jp2)
  27. 5.5 Characterization of ZrO₂-Y₂O₃/Si Interface / p63 (0039.jp2)
  28. 5.6 Strain Measurements in YSZ Films / p67 (0041.jp2)
  29. 5.7 Summary / p71 (0043.jp2)
  30. REFERENCES / p74 (0045.jp2)
  31. 6 Strain Measurements of Lattice at Thin Amorphous Layer/Crystal Interface by Ion Beam Channeling / p75 (0045.jp2)
  32. 6.1 Introduction / p75 (0045.jp2)
  33. 6.2 Experimental Procedures / p76 (0046.jp2)
  34. 6.3 Strain of Si at SiO₂/Si Interface / p78 (0047.jp2)
  35. 6.4 Summary / p81 (0048.jp2)
  36. REFERENCES / p86 (0051.jp2)
  37. 7 Conclusion / p87 (0051.jp2)
  38. Appendix LIST OF PUBLICATIONS / p91 (0053.jp2)
2access

Codes

  • NII Article ID (NAID)
    500000077134
  • NII Author ID (NRID)
    • 8000000077337
  • DOI(NDL)
  • NDLBibID
    • 000000241448
  • Source
    • NDL ONLINE
    • NDL Digital Collections

Export

Page Top