A study of amorphous semiconductors for nonvolatile memory devices アモルファス半導体不揮発性メモリの研究
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Bibliographic Information
- Title
-
A study of amorphous semiconductors for nonvolatile memory devices
- Other Title
-
アモルファス半導体不揮発性メモリの研究
- Author
-
Gosain, Dharam Pal
- Author(Another name)
-
ゴサイン, ダラム パル
- University
-
金沢大学
- Types of degree
-
工学博士
- Grant ID
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甲第1043号
- Degree year
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1991-03-25
Note and Description
博士論文
Table of Contents
- CONTENTS / p3 (0006.jp2)
- CHAPTER 1 INTRODUCTION / p1 (0008.jp2)
- CHAPTER 2 GENERAL PROPERTIES OF AMORPHOUS SEMICONDUCTORS / p6 (0011.jp2)
- 2.1 Introduction / p6 (0011.jp2)
- 2.2 Model for Amorphous Semiconductors / p18 (0017.jp2)
- 2.3 dc Electrical Conductivity / p25 (0020.jp2)
- 2.4 Defect States in Amorphous Semiconductors / p27 (0021.jp2)
- 2.5 Mechanism for Switching / p36 (0026.jp2)
- CHAPTER 3 EXPERIMENTAL METHODS / p45 (0030.jp2)
- 3.1 Preparation of Bulk Samples / p45 (0030.jp2)
- 3.2 Thin Film Preparation and Composition Measurements / p45 (0030.jp2)
- 3.3 Measurement of Crystallization Temperature / p50 (0033.jp2)
- 3.4 Melting Point Measurement / p52 (0034.jp2)
- 3.5 Structural Measurements / p53 (0034.jp2)
- 3.6 Structure of Memory Device / p53 (0034.jp2)
- 3.7 Memory Switching Measurements / p55 (0035.jp2)
- CHAPTER 4 PROPERTIES OF THE VARIOUS SYSTEMS STUDIED FOR THE NONVOLATILE MEMORY DEVICES / p63 (0039.jp2)
- 4.1 Ge-Te SYSTEM / p63 (0039.jp2)
- 4.2 Sb-Te SYSTEM / p81 (0048.jp2)
- 4.3 Sb-Te-Se SYSTEM / p94 (0055.jp2)
- 4.4 AS-Sb-Te SYSTEM / p108 (0062.jp2)
- 4.5 General Conclusions / p121 (0068.jp2)
- CHAPTER 5 GENERAL DISCUSSION AND CONCLUDING SUMMARY / p123 (0069.jp2)
- 5.1 General Discussion / p123 (0069.jp2)
- 5.2 Concluding Summary / p129 (0072.jp2)
- ACKNOWLEDGMENTS / p133 (0074.jp2)
- APPENDIX I / p135 (0075.jp2)
- REFERENCES / p138 (0077.jp2)
- LIST OF PUBLICATIONS / p142 (0079.jp2)