A physico-technical step to ZnSe blue light emitting diode 青色発光素子開発への物理的、かつ技術的な過程
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Bibliographic Information
- Title
-
A physico-technical step to ZnSe blue light emitting diode
- Other Title
-
青色発光素子開発への物理的、かつ技術的な過程
- Author
-
淀, 徳男
- Author(Another name)
-
ヨド, トクオ
- University
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大阪大学
- Types of degree
-
理学博士
- Grant ID
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乙第5565号
- Degree year
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1991-12-12
Note and Description
博士論文
Table of Contents
- Contents / p2 (0003.jp2)
- Abstract / p7 (0006.jp2)
- 1.Introduction / p10 (0008.jp2)
- 1-1.Solid state properties required for blue light emitting diode(B-LED) / p11 (0009.jp2)
- 1-2.Background of B-LED fabricated using various materials / p12 (0009.jp2)
- 1-3.Why is ZnSe B-LED chosen as most hopeful material? / p18 (0012.jp2)
- 1-4.Purpose and significance of this study / p20 (0013.jp2)
- 1-5.Construction of this study / p23 (0015.jp2)
- 2.ZnSe epitaxial growth by metalorganic vapor phase epitaxy(MOVPE) / p28 (0017.jp2)
- 2-1.Heteroepitaxial growth / p28 (0017.jp2)
- 2-2.Homoepitaxial growth / p48 (0027.jp2)
- 3.Thermal stability of epilayer / p148 (0078.jp2)
- 3-1.Heteroepilayer / p149 (0079.jp2)
- 3-2.Homoepilayer / p156 (0082.jp2)
- 4.p-type ZnSe by ion implantation / p178 (0094.jp2)
- 4-1.Li⁺ ion implantation into ZnSe heteroepilayer / p180 (0095.jp2)
- 4-2.Na⁺ ion implantation into ZnSe heteroepilayer / p196 (0103.jp2)
- 4-3.Li⁺ ion implantation into ZnSe homoepilayer / p204 (0107.jp2)
- 4-4.Comparison of doping technique between vapor phase and ion implantation into ZnSe epilayer / p207 (0109.jp2)
- 5.Crystalline quality of ZnSe epilayer grown on Li⁺-implanted ZnSe heteroepilayer and fabrication of ZnSe B-LED / p255 (0133.jp2)
- 5-1.Crystalline quality of undoped ZnSe epilayer on Li⁺-implanted epilayer / p256 (0134.jp2)
- 5-2.Crystalline quality of n-type ZnSe epilayer on Li⁺-implanted epilayer / p261 (0136.jp2)
- 6.Conclusion / p291 (0152.jp2)
- 7.Acknowledgement / p294 (0154.jp2)
- 8.References / p295 (0155.jp2)
- 9.Publication lists / p303 (0159.jp2)
