Epitaxial growth of GaAs on Si substrate by metalorganic chemical vapor deposition 有機金属化学気相成長法によるシリコン基板上へのガリウム砒素エピタキシャル成長
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著者
書誌事項
- タイトル
-
Epitaxial growth of GaAs on Si substrate by metalorganic chemical vapor deposition
- タイトル別名
-
有機金属化学気相成長法によるシリコン基板上へのガリウム砒素エピタキシャル成長
- 著者名
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西村, 隆司
- 著者別名
-
ニシムラ, タカシ
- 学位授与大学
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大阪大学
- 取得学位
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工学博士
- 学位授与番号
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乙第5567号
- 学位授与年月日
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1991-12-12
注記・抄録
博士論文
目次
- ABSTRACT / p1 (0003.jp2)
- CONTENTS / p3 (0005.jp2)
- CHAPTER 1 GENERAL INTRODUCTION / p1 (0008.jp2)
- References / p7 (0014.jp2)
- CHAPTER 2 DISLOCATION REDUCTION OF GaAs-on-Si / p8 (0015.jp2)
- 2.1 Reduction of Dislocation Density in GaAs-on-Si by Strained-layer Superlattice(SLS) of In[化学式]Ga₁₋[化学式]As-GaAs[化学式]P₁₋[化学式] / p8 (0015.jp2)
- 2.2 Dislocation Reduction by Thermal Cyclic Annealing(TCA) / p18 (0025.jp2)
- 2.3 Dislocation Reduction by The Combination of SLS and TCA / p22 (0029.jp2)
- 2.4 Conclusion / p26 (0033.jp2)
- References / p27 (0034.jp2)
- CHAPTER 3 GaAs-on-Si LAYER GROWN BY SPECIFICALLY DESIGNED MOCVD SYSTEM / p28 (0035.jp2)
- 3.1 Introduction:Two-Reactor MOCVD System Specifically Designed for GaAs-on-Si Growth / p28 (0035.jp2)
- 3.2 Experimental / p31 (0038.jp2)
- 3.3 Results and Discussion / p31 (0038.jp2)
- 3.4 Conclusion / p35 (0042.jp2)
- References / p37 (0044.jp2)
- CHAPTER 4 REDUCTION OF THERMAL STRESS / p38 (0045.jp2)
- 4.1 Background / p38 (0045.jp2)
- 4.2 Growth Condition for Single Domain GaAs Layer on SOS / p40 (0047.jp2)
- 4.3 Crystal Characteristics of GaAs-on-SOS / p44 (0051.jp2)
- 4.4 Dislocation Reduction of GaAs-on-SOS / p50 (0057.jp2)
- 4.5 Conclusion / p53 (0060.jp2)
- References / p54 (0061.jp2)
- CHAPTER 5 AN APPROACH TO CRACK FREE GaAs-on-Si:Surface morphology improvement of GaAs-on-Si using the 2-Reactor MOCVD system and an AlAs/GaAs low temperature buffer layer / p55 (0062.jp2)
- 5.1 Introduction / p55 (0062.jp2)
- 5.2 Experimental / p56 (0063.jp2)
- 5.3 Results and Discussion / p56 (0063.jp2)
- 5.4 Conclusion / p61 (0068.jp2)
- References / p63 (0070.jp2)
- CHAPTER 6 CRACK FREE AND LOW DISLOCATION DENSITY GaAs-on-Si GROWN BY 2-REACTOR MOCVD SYSTEM / p64 (0071.jp2)
- 6.1 Introduction / p64 (0071.jp2)
- 6.2 Experimental / p66 (0073.jp2)
- 6.3 Results and discussion / p69 (0076.jp2)
- 6.4 Conclusion / p74 (0081.jp2)
- References / p75 (0082.jp2)
- SUMMARY / p76 (0083.jp2)
- ACKNOWLEDGMENTS / p78 (0085.jp2)
- APPENDIX I / p79 (0086.jp2)
