Ultraviolet-light assisted chemical vapor deposition of Si 紫外線励起シリコン気相成長に関する研究
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著者
書誌事項
- タイトル
-
Ultraviolet-light assisted chemical vapor deposition of Si
- タイトル別名
-
紫外線励起シリコン気相成長に関する研究
- 著者名
-
Motharul Kabir Mazumder
- 著者別名
-
モタハル カビル マズンデル
- 学位授与大学
-
東北大学
- 取得学位
-
工学博士
- 学位授与番号
-
甲第4491号
- 学位授与年月日
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1991-11-13
注記・抄録
博士論文
目次
- INDEX / p1 (0005.jp2)
- 1.Introduction / p1 (0010.jp2)
- 1.1 Chemical vapor deposition of Si epitaxial films / p1 (0010.jp2)
- 1.2 Apparatus for the CVD of Si films / p3 (0012.jp2)
- 1.3 Reactant gases of Si-contained compounds / p10 (0019.jp2)
- 1.4 Low-temperature process for VLSI / p25 (0034.jp2)
- 1.5 Cleaning process / p40 (0049.jp2)
- 1.6 Generation of growth defects / p44 (0053.jp2)
- 1.7 Purpose and method of the present study / p49 (0058.jp2)
- References / p54 (0063.jp2)
- 2.Experimental / p67 (0076.jp2)
- 2.1 Experimental apparatus / p67 (0076.jp2)
- 2.2 Sample preparation / p81 (0090.jp2)
- 2.3 Growth process / p86 (0095.jp2)
- 2.4 Observation of growth defect / p89 (0098.jp2)
- 2.5 Measurement of the growth rate / p93 (0102.jp2)
- 2.6 Chemical analysis of impurities:Electron Probe Micro analysis / p97 (0106.jp2)
- References / p98 (0107.jp2)
- 3.Results / p99 (0108.jp2)
- 3.1 Generation kinetics of pyramidal hillocks on Si(111) 0º off surfaces / p99 (0108.jp2)
- 3.2 Control of pyramidal hillocks / p132 (0141.jp2)
- 3.3 Effect of the UV-light irradiated hydrogen carrier gas on Si epitaxial growth / p150 (0159.jp2)
- 3.4 Origin and mechanism of the UV-light irradiation effect / p176 (0185.jp2)
- References / p205 (0214.jp2)
- 4.Discussion / p208 (0217.jp2)
- 4.1 Generation mechanism of growth defects on Si(lll) / p208 (0217.jp2)
- 4.2 Suppression of growth defect generation: I.No UV-light irradiation / p263 (0272.jp2)
- 4.3 Suppression of growth defect generation:II.UV-light irradiated hydrogen / p274 (0283.jp2)
- 4.4 Comparison to other photo-CVD methods / p311 (0320.jp2)
- References / p316 (0325.jp2)
- 5.Conclusion / p322 (0331.jp2)
- Acknowledgments / p330 (0339.jp2)