Theoretical and experimental study of recombination process at semiconductor surfaces and interfaces 半導体表面および界面における再結合過程の理論的および実験的研究

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Author

    • 齊藤, 俊也 サイトウ, トシヤ

Bibliographic Information

Title

Theoretical and experimental study of recombination process at semiconductor surfaces and interfaces

Other Title

半導体表面および界面における再結合過程の理論的および実験的研究

Author

齊藤, 俊也

Author(Another name)

サイトウ, トシヤ

University

北海道大学

Types of degree

工学博士

Grant ID

甲第3044号

Degree year

1992-03-25

Note and Description

博士論文

Table of Contents

  1. Contents / (0005.jp2)
  2. Chapter 1 Introduction / p1 (0010.jp2)
  3. 1.1 Motivation and Objective of the Present Paper / p1 (0010.jp2)
  4. 1.2 Synopsis of Each Chapter / p7 (0016.jp2)
  5. References / p10 (0019.jp2)
  6. Chapter 2 Previous Treatments of Surface and Interface Recombination Processes / p11 (0020.jp2)
  7. 2.1 Introduction / p11 (0020.jp2)
  8. 2.2 Surface Recombination Velocity / p12 (0021.jp2)
  9. References / p20 (0029.jp2)
  10. Chapter 3 Method of Rigorous Computer Simulation of Surface Recombination / p21 (0030.jp2)
  11. 3.1 Introduction / p21 (0030.jp2)
  12. 3.2 Actual Situation under Photo-excitation / p21 (0030.jp2)
  13. 3.3 Surface or Interface State Density / p24 (0033.jp2)
  14. 3.4 Boundary Condition at Surface / p25 (0034.jp2)
  15. 3.5 One Dimensional Analysis / p27 (0036.jp2)
  16. References / p39 (0048.jp2)
  17. Chapter 4 Behavior of Surface Recombination Velocity at SiO₂/Si Interface / p40 (0049.jp2)
  18. 4.1 Introduction / p40 (0049.jp2)
  19. 4.2 Properties of Surface Recombination Velocity / p40 (0049.jp2)
  20. 4.3 Method for Reducing Surface Recombination Velocity / p49 (0058.jp2)
  21. References / p59 (0068.jp2)
  22. Chapter 5 Measurement of Surface Recombination Velocity / p60 (0069.jp2)
  23. 5.1 Introduction / p60 (0069.jp2)
  24. 5.2 MOS Method / p60 (0069.jp2)
  25. 5.3 Time-domain Photo-decay Method / p64 (0073.jp2)
  26. 5.4 Frequency Modulated Photo-current Method / p70 (0079.jp2)
  27. 5.5 Band-edge Photoluminescence Intensity / p74 (0083.jp2)
  28. References / p86 (0095.jp2)
  29. Chapter6 Recombination at Compound Semiconductor Surfaces and Interfaces / p87 (0096.jp2)
  30. 6.1 Introduction / p87 (0096.jp2)
  31. 6.2 Photoluminescence Intensity and Effective Surface Recombination Velocity at GaAs Surface / p87 (0096.jp2)
  32. 6.3 Effect of Surface Treatments / p89 (0098.jp2)
  33. References / p103 (0112.jp2)
  34. Chapter 7 Surface State Spectroscopy by Photoluminescence / p104 (0113.jp2)
  35. 7.1 Introduction / p104 (0113.jp2)
  36. 7.2 Principle of Surface State Spectroscopy / p105 (0114.jp2)
  37. 7.3 Theoretical Analysis / p110 (0119.jp2)
  38. 7.3 Application to Experimental PL Data / p119 (0128.jp2)
  39. References / p131 (0140.jp2)
  40. Chapter 8 Summary and Conclusions / p132 (0141.jp2)
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Codes

  • NII Article ID (NAID)
    500000085280
  • NII Author ID (NRID)
    • 8000000085494
  • DOI(NDL)
  • NDLBibID
    • 000000249594
  • Source
    • NDL ONLINE
    • NDL Digital Collections

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