Threshold current density reduction of GaInAsP/InP surface emitting lasers by improving mirror reflectivity 高反射率化によるGaInAsP/InP面発光レーザのしきい値電流密度の低減

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Title: Threshold current density reduction of GaInAsP/InP surface emitting lasers by improving mirror reflectivity

博士論文

論文目録 / (0002.jp2)
Abstract / (0008.jp2)
Chapter 1 Introduction / p1 (0010.jp2)
1.1 Background / p1 (0010.jp2)
1.2 Surface Emitting Lasers / p4 (0013.jp2)
1.3 Purpose of This Study and Conetnt of This Thesis / p7 (0016.jp2)
Clapter 2 Design Consideration of GaInAsP/InP Surface Emitting Lasers / p19 (0028.jp2)
2.1 Basic Structure / p20 (0029.jp2)
2.2 Design of GaInAsP/InP Surfase Emitting Lasers / p21 (0030.jp2)
Capter 3 Reflector Design for Surface Emitting Lasers / p32 (0041.jp2)
3.1 Reflectors for Surface Emitting Lasers / p33 (0042.jp2)
3.2 Multilayer Reflector Design / p34 (0043.jp2)
Chapter 4 Electron Beam Evaporation for Multilayer Reflectors / p57 (0066.jp2)
4.1 Electron Beam Evaporator / p58 (0067.jp2)
4.2 Thickness Control Technique / p60 (0069.jp2)
4.3 Multilayer Evaporation by Electron Beam Evaporator / p65 (0074.jp2)
Chapter 5 Characterization of Evaporated Mirrors / p80 (0089.jp2)
5.1 Absorption Loss Estimation / p81 (0090.jp2)
5.2 Reflectivity Estimation / p82 (0091.jp2)
Chapter 6 Threshold Current Density Reduction by High Reflective Mirrorrs / p96 (0105.jp2)
6.1 Application of Si/SiO₂ Multilayer in its infancy / p97 (0106.jp2)
6.2 Application of Si/SiO₂ Multilayer by Optical Monitoring / p101 (0110.jp2)
Chapter 7 Performances of GaInAsP/InP Surface Emitting Lasers / p119 (0128.jp2)
7.1 Temperature Characteristics / p120 (0129.jp2)
Chapter 8 Considerations / p124 (0133.jp2)
Chapter 9 Conclusions / p136 (0145.jp2)
Acknowledgments / (0149.jp2)
Publication List / (0147.jp2)

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