Improved electrical characteristics and integration of resonant-tunneling hot electron transistors (RHETs) 共鳴トンネリングホットエレクトロントランジスタ(RHET)の電気的特性改善と集積化に関する研究
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著者
書誌事項
- タイトル
-
Improved electrical characteristics and integration of resonant-tunneling hot electron transistors (RHETs)
- タイトル別名
-
共鳴トンネリングホットエレクトロントランジスタ(RHET)の電気的特性改善と集積化に関する研究
- 著者名
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今村, 健一
- 著者別名
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イマムラ, ケンイチ
- 学位授与大学
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東京工業大学
- 取得学位
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博士 (工学)
- 学位授与番号
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乙第2463号
- 学位授与年月日
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1993-03-31
注記・抄録
博士論文
目次
- 論文目録 (2コマ目)
- Contents (5コマ目)
- Chapter1 Introduction/p1 (8コマ目)
- 1.1 Background and purpose of this study/p1 (8コマ目)
- 1.2 Summary of previous work on HETs and RHETs/p5 (12コマ目)
- 1.3 Objective of this study/p20 (27コマ目)
- 1.4 Contents of this study/p20 (27コマ目)
- References/p21 (28コマ目)
- Chapter2 Developments of InGaAs RHETs/p24 (31コマ目)
- 2.1 Limit of GaAs/AlGaAs HETs/p24 (31コマ目)
- 2.2 Design and fabrication of InGaAs/In(AlGa)As HETs/p29 (36コマ目)
- 2.3 Characterization of DC performance in InGaAs/In(AlGa)As HETs/p32 (39コマ目)
- 2.4 The operating principle and backgroud of RTBs development/p36 (43コマ目)
- 2.5 Development of InGaAs/In(AlGa)As RHETs/p38 (45コマ目)
- References/p43 (50コマ目)
- Chapter3 Development of fundamental technology for integrating InGaAs/In(AlGa)As RHETs/p45 (52コマ目)
- 3.1 Self-alignment process for InGaAs RHETs/p45 (52コマ目)
- 3.2 Designing the collector barrier structure to improve RHET DCcharacteristics/p49 (56コマ目)
- 3.3 Microwave performace of InGaAs/In(AlGa)As RHETs/p59 (66コマ目)
- References/p76 (83コマ目)
- Chapter4 Development of RHET integrated circuits/p78 (85コマ目)
- 4.1 Preliminaries/p78 (85コマ目)
- 4.2 Design of the RHET basic logic gates/p78 (85コマ目)
- 4.3 Structure of RHET integrated circuits and their fabrication process/p80 (87コマ目)
- 4.4 Fabrication and operation of a RHET latch circuit/p83 (90コマ目)
- 4.5 Fabrication and operation of a RHET full adder/p86 (93コマ目)
- References/p90 (97コマ目)
- Chapter5 Investigation into high-speed RHET ICs/p92 (99コマ目)
- 5.1 Background/p92 (99コマ目)
- 5.2 Circuit simulation for RHET logic circuits/p92 (99コマ目)
- 5.3 Reducing base resistance using Pd/Ge electrodes/p95 (102コマ目)
- 5.4 Circuit simulation for reduced RB RHETs/p105 (112コマ目)
- References/p107 (114コマ目)
- Chaptrer6 Conclusion/p108 (115コマ目)
- Appendix:/p110 (117コマ目)
- A1.Observation of ballistic electrons using magnetic field effects inGaAs/AlGaAs HETs/p110 (117コマ目)
- A2.InGaAs/In(AlGa)As RHETs with pseudmorphic InAs base/p117 (124コマ目)
- Acknowledgments/p128 (135コマ目)
- Published paper/p129 (136コマ目)