Electrical properties of metal-oxide-semiconductor field-effect-transistors made in ultrathin-film silicon-on-insulators 絶縁膜上のシリコンに形成したMOSトランジスタの電気特性

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Author

    • 吉見, 信 ヨシミ, マコト

Bibliographic Information

Title

Electrical properties of metal-oxide-semiconductor field-effect-transistors made in ultrathin-film silicon-on-insulators

Other Title

絶縁膜上のシリコンに形成したMOSトランジスタの電気特性

Author

吉見, 信

Author(Another name)

ヨシミ, マコト

University

東京大学

Types of degree

博士 (工学)

Grant ID

乙第10226号

Degree year

1991-05-30

Note and Description

博士論文

Table of Contents

  1. Table of Contents / p7 (0006.jp2)
  2. Chapter1 Introduction / p1 (0007.jp2)
  3. Chapter2 Simulation and analysis of the fundamental properties of ultrathin-film SOI MOSFETs / p7 (0010.jp2)
  4. 2.1 Simulated device structure / p7 (0010.jp2)
  5. 2.2 Subthreshold characteristic / p9 (0011.jp2)
  6. 2.3 Static current-voltage characteristic / p13 (0013.jp2)
  7. 2.4 Switching characteristic / p27 (0020.jp2)
  8. Chapter3 Preparation of SOI films by electron beam recrystallization and their application to 3D LSIs / p33 (0023.jp2)
  9. 3.1 Amplitude-modulated pseudo-line electron beam recrystallization / p33 (0023.jp2)
  10. 3.2 Heat analysis using the finite element method / p38 (0026.jp2)
  11. 3.3 Fabrication of a stacked CMOS inverter using a tungsten cap / p48 (0031.jp2)
  12. 3.4 Improvement of the seed structure and crystal properties of SOI films / p54 (0034.jp2)
  13. 3.5 Application of electron beam annealed SOI films to the fabrication of a 3D image processor / p63 (0038.jp2)
  14. Chapter4 Fabrication of ultrathin-film SOI MOSFETs and measurements on their fundamental characteristics / p73 (0043.jp2)
  15. 4.1 Device fabrication process / p73 (0043.jp2)
  16. 4.2 Measurements of fundamental electrical characteristics / p76 (0045.jp2)
  17. Chapter5 Study on the lowering of drain breakdown voltage in ultrathin-film SOI MOSFETs / p93 (0053.jp2)
  18. 5.1 Background / p93 (0053.jp2)
  19. 5.2 Drain breakdown voltage in fabricated ultrathin-film SOI MOSFETs / p94 (0054.jp2)
  20. 5.3 Analysis by two-dimensional simulation / p96 (0055.jp2)
  21. 5.4 Measurements of an asymmetric structured device / p103 (0058.jp2)
  22. 5.5 Transient analysis for the drain breakdown process / p105 (0059.jp2)
  23. Chapter6 Perspectives of ultrathin-film SOI MOSFET technology / p113 (0063.jp2)
  24. 6.1 Comparison of scalability between bulk MOSFETs and ultrathin-film SOI MOSFETs / p113 (0063.jp2)
  25. 6.2 Problems to be overcome in ultrathin-film SOI MOSFET technology / p117 (0065.jp2)
  26. Chapter7 Conclusions / p125 (0069.jp2)
  27. Appendix A: Analytical formulation of the threshold voltage and vertical electric field in ultrathin-film SOI MOSFETs / p129 (0071.jp2)
  28. Appendix B: Formulation of the heat conduction equation in the finite element method / p131 (0072.jp2)
  29. Appendix C: Electrical measurement of SOI thickness in ultrathin-film SOI MOSFETs / p133 (0073.jp2)
  30. Appendix D: Generation-recombination model in the 2D device simulator employed / p137 (0075.jp2)
  31. References / p139 (0076.jp2)
  32. List of publications and presentations at international conferences / p153 (0083.jp2)
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Codes

  • NII Article ID (NAID)
    500000097870
  • NII Author ID (NRID)
    • 8000000098099
  • DOI(NDL)
  • NDLBibID
    • 000000262184
  • Source
    • NDL ONLINE
    • NDL Digital Collections

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