Electrical properties of metal-oxide-semiconductor field-effect-transistors made in ultrathin-film silicon-on-insulators 絶縁膜上のシリコンに形成したMOSトランジスタの電気特性
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著者
書誌事項
- タイトル
-
Electrical properties of metal-oxide-semiconductor field-effect-transistors made in ultrathin-film silicon-on-insulators
- タイトル別名
-
絶縁膜上のシリコンに形成したMOSトランジスタの電気特性
- 著者名
-
吉見, 信
- 著者別名
-
ヨシミ, マコト
- 学位授与大学
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東京大学
- 取得学位
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博士 (工学)
- 学位授与番号
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乙第10226号
- 学位授与年月日
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1991-05-30
注記・抄録
博士論文
目次
- Table of Contents / p7 (0006.jp2)
- Chapter1 Introduction / p1 (0007.jp2)
- Chapter2 Simulation and analysis of the fundamental properties of ultrathin-film SOI MOSFETs / p7 (0010.jp2)
- 2.1 Simulated device structure / p7 (0010.jp2)
- 2.2 Subthreshold characteristic / p9 (0011.jp2)
- 2.3 Static current-voltage characteristic / p13 (0013.jp2)
- 2.4 Switching characteristic / p27 (0020.jp2)
- Chapter3 Preparation of SOI films by electron beam recrystallization and their application to 3D LSIs / p33 (0023.jp2)
- 3.1 Amplitude-modulated pseudo-line electron beam recrystallization / p33 (0023.jp2)
- 3.2 Heat analysis using the finite element method / p38 (0026.jp2)
- 3.3 Fabrication of a stacked CMOS inverter using a tungsten cap / p48 (0031.jp2)
- 3.4 Improvement of the seed structure and crystal properties of SOI films / p54 (0034.jp2)
- 3.5 Application of electron beam annealed SOI films to the fabrication of a 3D image processor / p63 (0038.jp2)
- Chapter4 Fabrication of ultrathin-film SOI MOSFETs and measurements on their fundamental characteristics / p73 (0043.jp2)
- 4.1 Device fabrication process / p73 (0043.jp2)
- 4.2 Measurements of fundamental electrical characteristics / p76 (0045.jp2)
- Chapter5 Study on the lowering of drain breakdown voltage in ultrathin-film SOI MOSFETs / p93 (0053.jp2)
- 5.1 Background / p93 (0053.jp2)
- 5.2 Drain breakdown voltage in fabricated ultrathin-film SOI MOSFETs / p94 (0054.jp2)
- 5.3 Analysis by two-dimensional simulation / p96 (0055.jp2)
- 5.4 Measurements of an asymmetric structured device / p103 (0058.jp2)
- 5.5 Transient analysis for the drain breakdown process / p105 (0059.jp2)
- Chapter6 Perspectives of ultrathin-film SOI MOSFET technology / p113 (0063.jp2)
- 6.1 Comparison of scalability between bulk MOSFETs and ultrathin-film SOI MOSFETs / p113 (0063.jp2)
- 6.2 Problems to be overcome in ultrathin-film SOI MOSFET technology / p117 (0065.jp2)
- Chapter7 Conclusions / p125 (0069.jp2)
- Appendix A: Analytical formulation of the threshold voltage and vertical electric field in ultrathin-film SOI MOSFETs / p129 (0071.jp2)
- Appendix B: Formulation of the heat conduction equation in the finite element method / p131 (0072.jp2)
- Appendix C: Electrical measurement of SOI thickness in ultrathin-film SOI MOSFETs / p133 (0073.jp2)
- Appendix D: Generation-recombination model in the 2D device simulator employed / p137 (0075.jp2)
- References / p139 (0076.jp2)
- List of publications and presentations at international conferences / p153 (0083.jp2)
