Optoelectronic properties of hydrogenated amorphous silicon alloys and their application to X-ray sensors 水素化アモルファスシリコン合金の光電物性とそのX線センサーへの応用

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Author

    • 魏, 光普 ウェイ, クォンプ

Bibliographic Information

Title

Optoelectronic properties of hydrogenated amorphous silicon alloys and their application to X-ray sensors

Other Title

水素化アモルファスシリコン合金の光電物性とそのX線センサーへの応用

Author

魏, 光普

Author(Another name)

ウェイ, クォンプ

University

大阪大学

Types of degree

博士 (工学)

Grant ID

乙第6924号

Degree year

1996-03-25

Note and Description

博士論文

Table of Contents

  1. Abstract / p1 (0003.jp2)
  2. CONTENTS / p6 (0006.jp2)
  3. Chapter 1 Introduction / p1 (0007.jp2)
  4. 1.1 Historical Background / p1 (0007.jp2)
  5. 1.2 Purpose of this work and constructions of this thesis / p5 (0009.jp2)
  6. References / p9 (0011.jp2)
  7. Chapter 2 Production and characteristics of hydrogenated amorphous silicon and amorphous silicon-carbide / p11 (0012.jp2)
  8. 2.1 Introduction / p11 (0012.jp2)
  9. 2.2 Fabrication of a-Si:H and μc-Si:H / p13 (0013.jp2)
  10. 2.3 Preparation of Amorphous Silicon Carbide / p15 (0014.jp2)
  11. 2.4 Carbon content / p17 (0015.jp2)
  12. 2.5 Investigation of the structure and composition / p19 (0016.jp2)
  13. 2.6 Hydrogen content / p26 (0020.jp2)
  14. 2.7 Summary / p29 (0021.jp2)
  15. Reference / p30 (0022.jp2)
  16. Chapter 3 Optoelectronic properties of a-Si and a-SiC / p32 (0023.jp2)
  17. 3.1 Introduction / p32 (0023.jp2)
  18. 3.2 Optical absorption / p35 (0024.jp2)
  19. 3.3 Controllability of valency electron and conductivity / p40 (0027.jp2)
  20. 3.4 Control of the optical band gap / p42 (0028.jp2)
  21. 3.5 Photoluminescence measurement / p50 (0032.jp2)
  22. 3.6 Application of a-SiC film to LED / p53 (0033.jp2)
  23. 3.7 Summary / p59 (0036.jp2)
  24. Reference / p60 (0037.jp2)
  25. Chapter 4 Amorphous Silicon p-i-n Single Junction X-ray Sensor and Its Basic Properties / p62 (0038.jp2)
  26. 4.1 Introduction / p62 (0038.jp2)
  27. 4.2 Mechanism of the generation of X-ray induced carriers / p63 (0038.jp2)
  28. 4.3 Fabrication of a-Si X-ray sensor / p66 (0040.jp2)
  29. 4.4 a-Si X-ray photoconductive sensor / p66 (0040.jp2)
  30. 4.5 p-i-n Single junction X-ray sensor and its basic properties / p67 (0040.jp2)
  31. 4.6 Summary / p71 (0042.jp2)
  32. Reference / p72 (0043.jp2)
  33. Chapter 5 Integrated X-ray Sensor and Its Application to X-ray Computed Tomography (XCT) / p73 (0043.jp2)
  34. 5.1 Introduction / p73 (0043.jp2)
  35. 5.2 Scintillator / a-Si p-i-n X-ray sensor / p74 (0044.jp2)
  36. 5-3 XCT and its requirement to X-ray detector / p79 (0046.jp2)
  37. 5-4 Fabrication of Integrated a-Si X-ray Sensor / p86 (0050.jp2)
  38. 5-5 Application test to XCT equipment / p88 (0051.jp2)
  39. 5.6 Summary / p92 (0053.jp2)
  40. Reference / p93 (0053.jp2)
  41. Chapter 6 a-Si / c-Si Double Heterojunction X-ray Sensor / p95 (0054.jp2)
  42. 6.1 Introduction / p95 (0054.jp2)
  43. 6.2 Sensor structure and detection mechanism / p96 (0055.jp2)
  44. 6.3 Fabrication process / p99 (0056.jp2)
  45. 6.4 Sensor characteristics / p100 (0057.jp2)
  46. 6.5 Discussion / p103 (0058.jp2)
  47. 6.6 Summary / p104 (0059.jp2)
  48. References / p106 (0060.jp2)
  49. Chapter 7 Conclusion / p107 (0060.jp2)
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Codes

  • NII Article ID (NAID)
    500000130685
  • NII Author ID (NRID)
    • 8000000954432
  • DOI(NDL)
  • Text Lang
    • und
  • NDLBibID
    • 000000294999
  • Source
    • Institutional Repository
    • NDL ONLINE
    • NDL Digital Collections

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