Control of electrical properties of 4H-SiC grown by vapor phase epitaxy for power electronic application 気相成長4H-SiCの電気的性質の制御とパワーエレクトロニクスへの応用
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Bibliographic Information
- Title
-
Control of electrical properties of 4H-SiC grown by vapor phase epitaxy for power electronic application
- Other Title
-
気相成長4H-SiCの電気的性質の制御とパワーエレクトロニクスへの応用
- Author
-
伊藤, 明
- Author(Another name)
-
イトウ, アキラ
- University
-
京都大学
- Types of degree
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博士 (工学)
- Grant ID
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甲第6447号
- Degree year
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1996-03-23
Note and Description
博士論文
Table of Contents
- 論文目録 / (0001.jp2)
- Contents / p5 (0009.jp2)
- Abstract / p1 (0007.jp2)
- Acknowledgments / p3 (0008.jp2)
- Contents / p5 (0009.jp2)
- 1.Introduction / p1 (0011.jp2)
- 1.1 Background / p1 (0011.jp2)
- 1.2 Silicon carbide / p3 (0012.jp2)
- 1.3 Why 4H-SiC? / p9 (0015.jp2)
- 1.4 Outline of thesis / p12 (0017.jp2)
- 2.Bulk Crystal Growth of 4H-SiC by Sublimation Method / p19 (0020.jp2)
- 2.1 Introduction / p19 (0020.jp2)
- 2.2 Sublimation growth system / p22 (0022.jp2)
- 2.3 Bulk crystal growth / p23 (0022.jp2)
- 2.4 Polytype identification and crystallinity / p30 (0026.jp2)
- 2.5 Characterization of 4H-SiC bulk crystals / p33 (0027.jp2)
- 2.6 Summary / p51 (0036.jp2)
- 3.Homoepitaxial CVD Growth of 4H-SiC:Step-Controlled Epitaxy / p57 (0039.jp2)
- 3.1 Introduction / p57 (0039.jp2)
- 3.2 CVD apparatus and growth procedure / p58 (0040.jp2)
- 3.3 Homoepitaxial CVD growth of undoped 4H-SiC / p62 (0042.jp2)
- 3.4 Control of impurity doping during homoepitaxial CVD growth / p74 (0048.jp2)
- 3.5 Impurity-incorporation mechanism in step-controlled epitaxy / p81 (0051.jp2)
- 3.6 Summary / p90 (0056.jp2)
- 4.Characterization of 4H-SiC Homoepitaxial Layers by Photoluminescence / p97 (0059.jp2)
- 4.1 Introduction / p97 (0059.jp2)
- 4.2 Photoluminescence of undoped 4H-SiC homoepitaxial layers / p98 (0060.jp2)
- 4.3 Temperature dependence of exciton band-gap / p104 (0063.jp2)
- 4.4 Photoluminescence due to free excitons / p104 (0063.jp2)
- 4.5 Quenching properties / p106 (0064.jp2)
- 4.6 Summary / p118 (0070.jp2)
- 5.Electrical Properties of 4H-SiC Grown by Step-Controlled Epitaxy / p121 (0071.jp2)
- 5.1 Introduction / p121 (0071.jp2)
- 5.2 Hall effects and identification of impurity levels / p122 (0072.jp2)
- 5.3 Breakdown field / p140 (0081.jp2)
- 5.4 Electron drift velocity / p143 (0082.jp2)
- 5.5 Schottky barrier heights of metal/4H-SiC structures / p154 (0088.jp2)
- 5.6 Discussion / p171 (0096.jp2)
- 5.7 Summary / p172 (0097.jp2)
- 6 Application to Power Devices:High-Voltage 4H-SiC Schottky Rectifiers / p179 (0100.jp2)
- 6.1 Introduction / p179 (0100.jp2)
- 6.2 Figure of merit for power devices / p181 (0101.jp2)
- 6.3 Feasibility of 4H-SiC Schottky rectifiers:theoretical prediction / p183 (0102.jp2)
- 6.4 Device performance / p193 (0107.jp2)
- 6.5 Advanced structure:edge termination / p207 (0114.jp2)
- 6.6 Summary / p217 (0119.jp2)
- 7.Conclusion / p223 (0122.jp2)
- 7.1 Conclusion / p223 (0122.jp2)
- 7.2 For future work / p226 (0124.jp2)
- Appendix / p231 (0126.jp2)
- A.1 Donor-acceptor pair emission / p231 (0126.jp2)
- A.2 Site effects / p233 (0127.jp2)
- B.1 Minimum yield:χmin / p235 (0128.jp2)
- C.1 Differential evaluation of electron concentration / p237 (0129.jp2)
- D.1 Interfacial layer model / p239 (0130.jp2)
- List of Publications / p243 (0132.jp2)