Fabrication processes and characterizations of non-planar semiconductor lasers with GaAs and related materials GaAs系材料を用いた非平坦な半導体レーザの作製法と評価に関する研究
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Bibliographic Information
- Title
-
Fabrication processes and characterizations of non-planar semiconductor lasers with GaAs and related materials
- Other Title
-
GaAs系材料を用いた非平坦な半導体レーザの作製法と評価に関する研究
- Author
-
高森, 毅
- Author(Another name)
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タカモリ, タケシ
- University
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京都大学
- Types of degree
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博士 (工学)
- Grant ID
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乙第9210号
- Degree year
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1996-03-23
Note and Description
博士論文
Table of Contents
- 論文目録 / (0001.jp2)
- ABSTRACT / p1 (0005.jp2)
- TABLE OF CONTENTS / (0006.jp2)
- I. INTRODUCTION / p1 (0008.jp2)
- 1-1. Background / p1 (0008.jp2)
- 1-2. Aims and Outline of This Study / p7 (0011.jp2)
- References / p11 (0013.jp2)
- II. MOLECULAR BEAM EPITAXIAL PROCESSES OF GaAs AND AlGaAs ON FLAT SUBSTRATES / p17 (0016.jp2)
- 2-1. Introduction / p17 (0016.jp2)
- 2-2. GaAs/AlGaAs Single Quantum Wells Grown on Variously Oriented GaAs Substrates / p19 (0017.jp2)
- 2-3. Electrical and Optical Properties of Si-doped GaAs on (311)Oriented Substrates / p27 (0021.jp2)
- 2-4. Si-doped [化学式] on (511)Oriented GaAs Substrates / p35 (0025.jp2)
- 2-5. Semi-insulating Property of Low-temperature Grown GaAs by MBE / p42 (0029.jp2)
- 2-6. Discussion / p46 (0031.jp2)
- 2-7. Summary / p51 (0033.jp2)
- References / p52 (0034.jp2)
- III. FABRICATION PROCESSES FOR NON-PLANAR SEMICONDUCTOR LASERS / p56 (0036.jp2)
- 3-1. Introduction / p56 (0036.jp2)
- 3-2. Lateral Junctions of Molecular Beam Epitaxial Grown Si-doped GaAs and AlGaAs on Patterned Substrates / p58 (0037.jp2)
- 3-3. Dry Etching Technology for Non-Planar Structures / p68 (0042.jp2)
- 3-4. Discussion / p76 (0046.jp2)
- 3-5. Summary / p80 (0048.jp2)
- References / p81 (0048.jp2)
- IV. LOW-THRESHOLD INDEX-GUIDED STRAINED InGaAs/AlGaAs QUANTUM WELL LASERS GROWN ON CHANNELED STRIPES / p84 (0050.jp2)
- 4-1. Introduction / p84 (0050.jp2)
- 4-2. Device Structure and Fabrication / p86 (0051.jp2)
- 4-3. 2×2 Matrix Approach for Calculation of Waveguide Modes / p91 (0053.jp2)
- 4-4. Properties of Current-Confinement Structure / p96 (0056.jp2)
- 4-5. Device Performances / p99 (0057.jp2)
- 4-6. Discussion / p106 (0061.jp2)
- 4-7. Summary / p107 (0061.jp2)
- References / p108 (0062.jp2)
- V. FOLDED-CAVITY SURFACE-EMITTING LASERS / p110 (0063.jp2)
- 5-1. Introduction / p110 (0063.jp2)
- 5-2. Device Structure / p111 (0063.jp2)
- 5-3. Fabrication Process / p113 (0064.jp2)
- 5-4. Device Performances / p116 (0066.jp2)
- 5-5. Discussion / p120 (0068.jp2)
- 5-6. Summary / p123 (0069.jp2)
- References / p124 (0070.jp2)
- VI. CONCLUSIONS / p126 (0071.jp2)
- ACKNOWLEDGMENTS / p131 (0073.jp2)
- PUBLICATIONS / p133 (0074.jp2)
- APPENDIX A PROGRAM LIST FOR EFFECTIVE INDEX AND OPTICAL MODE IN MULTI-LAYER WAVEGUIDES / p137 (0076.jp2)
- APPENDIX B LIST OF ABBREVIATIONS / p146 (0081.jp2)