In situ optical monitoring and control of metalorganic vapor phase epitaxy 有機金属気相成長の光学的その場観察と制御
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著者
書誌事項
- タイトル
-
In situ optical monitoring and control of metalorganic vapor phase epitaxy
- タイトル別名
-
有機金属気相成長の光学的その場観察と制御
- 著者名
-
小林, 康之
- 著者別名
-
コバヤシ, ヤスユキ
- 学位授与大学
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東京農工大学
- 取得学位
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博士 (工学)
- 学位授与番号
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博工乙第20号
- 学位授与年月日
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1996-03-25
注記・抄録
博士論文
目次
- Contents / p1 (0003.jp2)
- 1 Introduction / p1 (0004.jp2)
- 1.1 MBE and MOVPE growth / p1 (0004.jp2)
- 1.2 In situ monitoring methods / p5 (0006.jp2)
- 1.3 Surface Photo-Absorption(SPA) / p7 (0007.jp2)
- 1.4 The organization of this paper / p12 (0010.jp2)
- References / p14 (0011.jp2)
- 2 As and P desorption from III-V semiconductor surface in MOVPE / p17 (0012.jp2)
- 2.1 Introduction / p17 (0012.jp2)
- 2.2 Experimental procedure / p18 (0013.jp2)
- 2.3 SPA observation on As and P desorption from III-V semiconductor surface / p18 (0013.jp2)
- 2.4 Arrhenius plots of desorption rate constants / p20 (0014.jp2)
- 2.5 Conclusions / p23 (0015.jp2)
- References / p23 (0015.jp2)
- 3 Effect of strain on source gas decomposition and group V desorption in MOVPE / p24 (0016.jp2)
- 3.1 Introduction / p24 (0016.jp2)
- 3.2 Experimental procedure / p24 (0016.jp2)
- 3.3 Effect of strain on PH₃ decomposition / p25 (0016.jp2)
- 3.4 Effect of strain on P and As desorption / p27 (0017.jp2)
- 3.5 Conclusions / p32 (0020.jp2)
- References / p32 (0020.jp2)
- 4 Structure of group V surfaces in MOVPE / p33 (0020.jp2)
- 4.1 Introduction / p33 (0020.jp2)
- 4.2 Experimental / p34 (0021.jp2)
- 4.3 SPA subtraction spectra of As surface in GaAs / p35 (0021.jp2)
- 4.4 Phase diagram of As-stabilized GaAs surfaces / p38 (0023.jp2)
- 4.5 SPA spectra of P-stabilized surface in InP / p42 (0025.jp2)
- 4.6 Dependences of P surface structure on InP layer quality / p45 (0026.jp2)
- 4.7 Conclusions / p48 (0028.jp2)
- References / p48 (0028.jp2)
- 5 In situ monitoring and control of atomic layer epitaxy / p50 (0029.jp2)
- 5.1 Introduction / p50 (0029.jp2)
- 5.2 Experimental procedure / p51 (0029.jp2)
- 5.3 SPA study of the group III source decomposition process and ALE mechanism / p51 (0029.jp2)
- 5.4 In situ monitoring and controlling of ALE / p62 (0035.jp2)
- 5.5 Conclusions / p67 (0037.jp2)
- References / p67 (0037.jp2)
- 6 In situ monitoring and control of pseudomorphic InAs/InP heterostructure growth / p69 (0038.jp2)
- 6.1 Introduction / p69 (0038.jp2)
- 6.2 Experiments / p69 (0038.jp2)
- 6.3 SPA observation of As/P and P/As exchange reaction in InAs-on-InP and in InP-on-InAs heterostructure growth / p70 (0039.jp2)
- 6.4 Pseudomorphic InAs/InP single and multiple quantum well growths using in-situ controlled MOVPE / p79 (0043.jp2)
- 6.5 Conclusions / p89 (0048.jp2)
- References / p89 (0048.jp2)
- 7 Conclusions / p91 (0049.jp2)
- Acknowledgments / p96 (0052.jp2)
- Papers list / p97 (0052.jp2)