Transport and surface phenomena for silicon epitaxial growth シリコンエピタキシャル成長に関わる輸送現象と表面化学反応

この論文をさがす

著者

    • 羽深, 等 ハブカ, ヒトシ

書誌事項

タイトル

Transport and surface phenomena for silicon epitaxial growth

タイトル別名

シリコンエピタキシャル成長に関わる輸送現象と表面化学反応

著者名

羽深, 等

著者別名

ハブカ, ヒトシ

学位授与大学

広島大学

取得学位

博士 (工学)

学位授与番号

乙第2880号

学位授与年月日

1996-09-12

注記・抄録

博士論文

目次

  1. 論文目録 / (0001.jp2)
  2. Abstract / p2 (0004.jp2)
  3. CONTENTS / p5 (0006.jp2)
  4. Chapter1 Introduction / p1 (0008.jp2)
  5. 1.1 Background / p2 (0009.jp2)
  6. 1.2 Scope of this thesis / p15 (0015.jp2)
  7. References / p17 (0016.jp2)
  8. Chapter2 Gas Flow and Heat Transfer in a Pancake Reactor / p23 (0019.jp2)
  9. 2.1 Introduction / p24 (0020.jp2)
  10. 2.2 Gas flow visualization / p24 (0020.jp2)
  11. 2.3. Basic equations governing the epitaxial reactor / p28 (0022.jp2)
  12. 2.4 Results and discussion / p31 (0023.jp2)
  13. 2.5 Conclusions / p37 (0026.jp2)
  14. Nomenclature / p39 (0027.jp2)
  15. References / p40 (0028.jp2)
  16. Chapter3 Numerical Evaluation of Silicon Thin-film growth from SiHCl₃-H₂ Gas Mixture in a Single-Wafer Horizontal Reactor / p41 (0028.jp2)
  17. 3.1 Introduction / p42 (0029.jp2)
  18. 3.2 Preparation of epitaxial silicon thin-film / p42 (0029.jp2)
  19. 3.3 Results and discussion / p48 (0032.jp2)
  20. 3.4 Conclusions / p60 (0038.jp2)
  21. Nomenclature / p61 (0038.jp2)
  22. References / p63 (0039.jp2)
  23. Chapter4 Modeling of Epitaxial Silicon Thin-Film Growth on a Rotating Substrate in a Single-Wafer Horizontal Reactor / p65 (0040.jp2)
  24. 4.1 Introduction / p66 (0041.jp2)
  25. 4.2 Silicon epitaxial thin-film growth process / p66 (0041.jp2)
  26. 4.3 Results and discussion / p74 (0045.jp2)
  27. 4.4 Conclusions / p84 (0050.jp2)
  28. Nomenclature / p85 (0050.jp2)
  29. References / p87 (0051.jp2)
  30. Chapter5 Model on Transport phenomena and Silicon Epitaxial Growth of Thin-Film in SiHCl₃H₂ System under Atmospheric Pressure / p89 (0052.jp2)
  31. 5.1 Introduction / p90 (0053.jp2)
  32. 5.2 Preparation of silicon epitaxial thin-films / p90 (0053.jp2)
  33. 5.3 Basic equations governing the epitaxial reactor / p91 (0053.jp2)
  34. 5.4 Mathematical model of the rate process / p95 (0055.jp2)
  35. 5.5 Reasults and discussion / p102 (0059.jp2)
  36. 5.6 Summary / p111 (0063.jp2)
  37. Nomenclature / p112 (0064.jp2)
  38. References / p114 (0065.jp2)
  39. Chapter6 Effect of Transport Phenomena on Boron Concentration Pro-files in Silicon Epitaxial Wafers / p117 (0066.jp2)
  40. 6.1 Introduction / p118 (0067.jp2)
  41. 6.2 Basic equation for solid-state diffusion / p118 (0067.jp2)
  42. 6.3 Preparation of epitaxial silicon thin-film / p121 (0068.jp2)
  43. 6.4 Analysis of gas flow / p122 (0069.jp2)
  44. 6.5 Results and discussion / p123 (0069.jp2)
  45. 6.6 Conclusions / p130 (0073.jp2)
  46. References / p131 (0073.jp2)
  47. Chapter7 Roughness of Silicon Surface Heated in Hydrogen Ambient / p133 (0074.jp2)
  48. 7.1 Introduction / p134 (0075.jp2)
  49. 7.2 Experimental / p134 (0075.jp2)
  50. 7.3 Results and discussion / p136 (0076.jp2)
  51. 7.4 Conclusions / p149 (0082.jp2)
  52. References / p150 (0083.jp2)
  53. Summary and Conclusions / p153 (0084.jp2)
0アクセス

各種コード

  • NII論文ID(NAID)
    500000152324
  • NII著者ID(NRID)
    • 8000001069210
  • DOI(NDL)
  • NDL書誌ID
    • 000000316638
  • データ提供元
    • NDL-OPAC
    • NDLデジタルコレクション
ページトップへ